ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET 2N-CH 40V 6A 8SOP
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：40V
- Current - Continuous Drain (Id) @ 25°C：6A (Ta)
- Rds On (Max) @ Id, Vgs：38mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：2.9nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds：280pF @ 10V
- Power - Max：2W (Ta)
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOP
- Grade：-
- Qualification：-
Download product information
Overview
The SH8K26GZ0TB is a dual N-channel power MOSFET manufactured by ROHM Semiconductor. It features a 40V drain-source voltage rating and a continuous drain current of ±6.0A per channel. The device exhibits a maximum static drain-source on-state resistance (RDS(on)) of 38mΩ at VGS=10V and 50mΩ at VGS=4.5V. Total gate charge is typically 2.9nC, with a power dissipation capacity of 2.0W in an SOP8 package. The component operates within a junction temperature range of -55°C to +150°C.
Feature Summary
- Dual N-channel configuration for compact switching applications
- Low on-resistance optimized for efficiency
- Small surface-mount SOP8 package design
- Lead-free plating compliant with RoHS standards
Applications
- General electronic equipment switching circuits
- Motor drive control systems
- DC/DC converter topologies
Procurement Notes
Verify the specific ordering suffix TB against the official datasheet to confirm taping specifications and reel dimensions. Confirm that the component status aligns with current production availability, as this part may be designated for existing customers only. Ensure all electrical parameters match the target circuit requirements before finalizing procurement orders.
Selection Notes
Select this component when a dual N-channel topology is required within a small footprint. Evaluate the thermal resistance values relative to the expected ambient temperature and mounting board type. Consider the gate threshold voltage characteristics to ensure compatibility with the intended logic-level drive signals.
Part Context
This part belongs to the SH8K series of low-voltage power MOSFETs from ROHM. It utilizes micro-processing technology to achieve low on-resistance within a standard SOP8 outline. The series targets general-purpose switching applications where space constraints and efficiency are primary design considerations.
Replacement Considerations
SH8KB6 is documented as a recommended replacement with the same SOP8 package and similar electrical characteristics. Verify pinout compatibility and thermal performance differences before substituting.
