SH8K32GZETB

Overview

The SH8K32GZETB is a dual N-channel power MOSFET manufactured by ROHM Semiconductor in an SOP-8 surface-mount package. It features a drain-source voltage (VDSS) of 60V and a continuous drain current (ID) of ±4.5A at 25°C. The device offers a maximum static drain-source on-state resistance (RDS(on)) of 65mΩ at VGS=10V and ID=4.5A, with typical values of 46mΩ under the same conditions. Total gate charge (Qg) is typically 7.0nC at VGS=5V. Power dissipation is rated at 2.0W on a ceramic board and 1.4W on FR4. Operating junction temperature ranges from -55°C to +150°C.

Feature Summary

• Low on-resistance for efficient switching performance
• Compact SOP-8 surface mount package design
• Halogen-free construction with lead-free plating

Applications

• General purpose switching applications
• Power management circuits
• Motor driver stages

Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance and halogen-free status against current datasheet revisions. Ensure storage conditions remain within specified humidity and temperature limits to maintain solderability before assembly.

Selection Notes

Evaluate thermal resistance requirements based on PCB material; RthJA is 62.5°C/W on ceramic and 89.2°C/W on FR4. Check gate threshold voltage stability across the operating temperature range. Consider pulsed drain current capabilities if transient loads exceed steady-state ratings.

Part Context

This component belongs to the SH8K32 series of dual N-channel MOSFETs designed for compact power switching solutions. It utilizes silicon technology and is intended for standard electronic equipment rather than high-reliability specific applications like medical or aerospace systems without prior consultation.

Replacement Considerations

SH8K32TB1 is listed as a similar level replacement with the same SOP-8 package and identical electrical specifications.

FAQ

What is the maximum pulsed drain current?

The maximum pulsed drain current (IDP) is ±18A, provided the pulse width is ≤10μs and duty cycle is ≤1%.

How does the on-state resistance vary with gate voltage?

RDS(on) increases as gate voltage decreases. At VGS=4.0V, the maximum RDS(on) is 77mΩ, compared to 65mΩ at VGS=10V.

Is this device suitable for automotive safety-critical applications?

No. The datasheet explicitly states it is not recommended for specific applications requiring extremely high reliability, such as car accessories or safety devices, unless agreed upon in writing by ROHM.