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Product Detailed Parameters
- Description：MOSFET 2N-CH 60V 4.5A 8SOP
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：60V
- Current - Continuous Drain (Id) @ 25°C：4.5A
- Rds On (Max) @ Id, Vgs：65mOhm @ 4.5A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：10nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds：500pF @ 10V
- Power - Max：2W
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOP (5.0x6.0)
- Grade：-
- Qualification：-
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Overview
The SH8K32TB1 is a dual N-channel MOSFET array manufactured by Rohm Semiconductor, housed in an 8-SOP package. It features a drain-source voltage (V_DSS) rating of 60V and a continuous drain current (I_D) of 4.5A. The device is designed for efficient switching applications with low on-resistance characteristics. Key electrical parameters include a typical R_DS(on) specified at various gate drive voltages, ensuring compatibility with standard logic levels. The component supports surface mount mounting styles and operates within a defined temperature range, making it suitable for general-purpose power management circuits where compact form factors are required.
Feature Summary
- Dual N-channel configuration integrated into a single compact package
- Optimized for low on-resistance to minimize conduction losses
- Designed for high-reliability switching applications
Applications
- DC/DC converter circuits
- General-purpose power switching
- Load switching applications
Procurement Notes
Verify the exact ordering suffix and packaging specifications against the manufacturer's latest datasheet before procurement. Ensure that the 8-SOP package dimensions and pinout match the target PCB footprint. Confirm RoHS compliance status and supply chain availability directly with authorized distributors or the manufacturer to avoid counterfeit components.
Selection Notes
Select this component when a dual N-channel MOSFET solution is required in an 8-SOP package with a 60V voltage rating. Consider the 4.5A current capacity and thermal dissipation capabilities relative to the application's power requirements. Verify that the gate drive voltage aligns with the specified R_DS(on) performance curves for optimal efficiency.
Part Context
The SH8K32TB1 belongs to Rohm's series of dual N-channel MOSFET arrays. It shares similar package and functional characteristics with other models in the SH8Kxx family, such as the SH8K32GZETB. These devices are commonly used in consumer electronics and industrial equipment requiring compact power switching solutions.
Replacement Considerations
The SH8KA2TB1 is listed as a similar level replacement with the same package type. Verify pinout compatibility and electrical parameter equivalence before substitution.
