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The SH8K41GZETB is an N-channel dual Power MOSFET from Rohm Semiconductor, housed in a surface-mount SOP-8 package. It features a drain-source voltage (VDSS) of 80V and a continuous drain current (ID) of ±3.4A per channel. The device exhibits a maximum static drain-source on-state resistance (RDS(on)) of 130mΩ at VGS=10V and ID=3.4A. Total power dissipation is rated at 2.0W, with a junction-to-ambient thermal resistance of 62.5°C/W on a ceramic board. The component supports a junction temperature up to 150°C and includes body diodes with a continuous forward current rating of 1.6A.
Verify the specific ordering suffix GZETB against the manufacturer's official documentation to confirm packaging details such as tape width and reel size. Ensure that the procurement source provides valid traceability for RoHS compliance and halogen-free status. Confirm that the delivered components match the marking code SH8K41 to prevent counterfeit substitution during assembly.
Select this component when a dual N-channel MOSFET is required in an SOP-8 footprint with an 80V breakdown voltage. The 130mΩ RDS(on) specification suits applications requiring moderate current handling up to 3.4A per channel. Consider the 2.0W total power dissipation limit and thermal resistance values when designing heat dissipation strategies for the target circuit board layout.
This part belongs to Rohm's SH8K41 series of dual N-channel Power MOSFETs. The series is designed for general-purpose switching applications where space efficiency is critical. The SOP-8 package allows for automated surface-mount assembly, supporting high-volume manufacturing processes for electronic devices requiring reliable dual-channel switching capabilities.
Consult the official datasheet for direct pin-compatible substitutes within the same series. Verify that any alternative component matches the 80V VDSS, 3.4A ID, and SOP-8 package dimensions to ensure mechanical and electrical compatibility without redesigning the printed circuit board.