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The SH8K4TB1 is a dual N-channel power MOSFET manufactured by Rohm Semiconductor, housed in an 8-SOP surface-mount package. It features a drain-source voltage (Vdss) of 30V and a continuous drain current (Id) of 9A at 25°C. The device exhibits a typical on-resistance (Rds(on)) of 17 mΩ at Vgs=10V and Id=9A. Key electrical parameters include a maximum gate charge (Qg) of 21nC at 5V, a maximum input capacitance (Ciss) of 1190pF at 10V, and a threshold voltage (Vgs(th)) of 2.5V max at 1mA. The component supports a maximum power dissipation of 2W and operates within a junction temperature range up to 150°C.
Verify the specific ordering suffix to confirm packaging format, as variants exist for tape-and-reel or cut tape. Confirm RoHS compliance status and check supply status, as this part may be marked as not recommended for new designs depending on the region and distributor. Ensure storage conditions adhere to the specified moisture sensitivity level requirements before assembly.
Select this component when a dual N-channel MOSFET with 30V rating and 9A current capacity is required in an 8-pin SOP package. Consider the 17 mΩ Rds(on) at 10V drive for low-loss switching. Evaluate thermal management needs given the 2W power dissipation limit. Compare gate charge specifications against driving capabilities if high-frequency operation is intended.
The SH8K4TB1 belongs to Rohm's ECOMOS series of power MOSFETs, designed for general-purpose switching applications. It shares the SH8K4 family designation but is distinguished by its specific 8-SOP packaging and terminal configuration. This variant is part of Rohm's portfolio aimed at providing compact solutions for consumer electronics and industrial control systems requiring dual channel integration.
Publicly confirmed substitute part numbers include AO4822A from Alpha & Omega Semiconductor, DMN3033LSD-13 from Diodes Incorporated, and SI4214DDY-T1-GE3 from Vishay Siliconix. Verify pin compatibility and electrical parameter equivalence before substitution.