SH8K52GZETB

Overview

The SH8K52GZETB is a dual N-channel power MOSFET manufactured by ROHM Semiconductor, designed for surface-mount applications in the SOP-8 package. It features a drain-source voltage (Vdss) of 40 V and a continuous drain current (Id) of 12 A. The device exhibits a typical on-resistance (Rds(on)) of 47 mΩ at Vgs = 4.5 V. Key electrical parameters include a gate charge (Qg) of 3.5 nC, a threshold voltage (Vgs(th)) of 2.5 V, and a maximum power dissipation (Pd) of 13 W. Operating temperatures range from -55°C to +150°C junction temperature.

Feature Summary

• Dual N-channel configuration within a compact SOP-8 surface mount package.
• Low on-resistance optimized for efficient switching performance.
• Halogen-free construction compliant with environmental standards.

Applications

• General-purpose low-voltage switching circuits
• DC-DC converter output stages
• Motor driver interfaces

Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance and halogen-free status against current datasheet revisions. Ensure storage conditions remain within specified limits to prevent moisture damage prior to soldering.

Selection Notes

Select this component when a dual N-channel topology is required in an SOP-8 footprint. Evaluate thermal management requirements given the 13 W power dissipation rating. Compare gate charge specifications against drive capabilities to ensure adequate switching speed without excessive driver load.

Part Context

This part belongs to the SH8 series of dual MOSFETs from ROHM Semiconductor. It shares the SOP-8 physical form factor with other variants like the SH8M24GZETB but differs significantly in channel type and electrical ratings. The series targets cost-sensitive, space-constrained consumer and industrial electronics.

Replacement Considerations

Direct pin-compatible substitutes may exist within the same manufacturer's portfolio, such as other SH8 series devices with matching Vdss and Id ratings. Verify Rds(on) and Qg values to ensure equivalent performance before substitution.