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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 3.5A 8SOP
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：3.5A
- Rds On (Max) @ Id, Vgs：83mOhm @ 3.5A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：3.5nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds：140pF @ 10V
- Power - Max：2W
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOP
- Grade：-
- Qualification：-
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Overview
The SH8K5TB1 is a dual N-channel power MOSFET manufactured by Rohm Semiconductor, housed in an SOP-8 surface-mount package. It features a drain-source voltage (Vdss) of 60V and a continuous drain current (Id) of 4.5A. The device exhibits low on-resistance, specified at 0.12Ω typ at Vgs=4.5V and 0.09Ω typ at Vgs=10V. Key electrical characteristics include a total gate charge (Qg) of 3.7nC and a power dissipation (Pd) rating of 2W. The component operates within a storage temperature range of -55°C to 150°C and complies with RoHS standards.
Feature Summary
- Dual N-channel configuration for efficient switching applications
- Low on-resistance optimized for drive voltages of 4.5V and 10V
- Compact SOP-8 surface mount package design
Applications
- General purpose switching circuits
- DC/DC converter modules
- Motor driver interfaces
Procurement Notes
Verify the specific ordering suffix against the official Rohm Semiconductor datasheet to ensure correct packaging and tape specifications. Confirm that the procurement channel provides authentic components with traceable documentation. Check for any regional supply restrictions or end-of-life notices prior to finalizing orders.
Selection Notes
Select this component when a dual N-channel topology is required in a compact SOP-8 footprint. Ensure the application drive voltage aligns with the specified Rds(on) conditions at 4.5V or 10V. Verify that the 2W power dissipation limit and 60V voltage rating meet the circuit requirements without exceeding thermal constraints.
Part Context
This part belongs to Rohm's standard-grade power MOSFET family designed for general-purpose electronics. It is explicitly noted as not recommended for automotive equipment. The SH8K5TB1 serves as a complementary solution for space-constrained designs requiring dual-channel control in consumer and industrial non-automotive applications.
Replacement Considerations
The BU4310G datasheet lists BD5210G-1 as a similar level replacement with the same pinout and package. However, BD5210G-1 is a voltage detector, not a MOSFET. No verified direct MOSFET substitute is listed in the provided source material.
