SH8KA7GZETB

Overview

The SH8KA7GZETB is a dual N-channel MOSFET array manufactured by ROHM Semiconductor, housed in an 8-SOP surface-mount package. It features a drain-source voltage (Vdss) of 30V and a continuous drain current (Id) of 15A at ambient temperature. The device exhibits a typical on-resistance (Rds(on)) optimized for low-loss switching applications. Key electrical parameters include a gate charge (Qg) of approximately 9.7nC at 10V and an input capacitance (Ciss) of 500pF at 30V. The component supports a junction temperature up to 150°C and offers a power dissipation rating of 2W. It is designed for high-efficiency power management in compact electronic systems.

Feature Summary

• Dual N-channel configuration within a single SOP-8 package for space-efficient circuit design
• Low on-resistance characteristics suitable for high-current switching applications
• Optimized gate charge and capacitance for improved switching performance
• Halogen-free construction compliant with environmental standards

Applications

• Power management circuits in portable consumer electronics
• Load switching and protection in automotive infotainment systems
• DC-DC converter output stages in industrial power supplies
• Battery protection modules for mobile devices

Procurement Notes

Verify the specific ordering suffix (e.g., TR, CT) to confirm tape and reel or cut tape packaging requirements. Confirm RoHS compliance status and REACH registration details prior to integration. Ensure thermal management strategies align with the 2W power dissipation limit. Check for obsolescence notices as this component may be subject to lifecycle changes. Validate pinout compatibility with existing PCB footprints during procurement planning.

Selection Notes

Select this component when a dual N-channel solution is required in a small footprint. Consider the 30V voltage rating and 15A current capacity against load requirements. Evaluate Rds(on) performance at the intended drive voltage for efficiency calculations. Assess thermal resistance and ambient operating conditions to ensure junction temperature limits are not exceeded. Compare gate charge specifications against driver capabilities for optimal switching speed.

Part Context

This part belongs to ROHM’s SH8K series of dual MOSFET arrays, designed for compact power switching applications. The SOP-8 package provides a balance between thermal performance and board space savings. It complements other discrete transistors by integrating two channels into a single unit, reducing component count and interconnection complexity in power distribution networks.

Replacement Considerations

SH8KA1GZETB is a confirmed substitute with identical SOP-8 packaging and similar electrical characteristics. Verify that the replacement meets all voltage and current ratings for the specific application. Cross-reference datasheet parameters to ensure functional equivalence in the target circuit design.