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Product Detailed Parameters
- Description：MOSFET 2N-CH 40V 8.5A 8SOP
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：40V
- Current - Continuous Drain (Id) @ 25°C：8.5A (Ta)
- Rds On (Max) @ Id, Vgs：19.4mOhm @ 8.5A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：10.6nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：530pF @ 20V
- Power - Max：2W (Ta)
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOP
- Grade：-
- Qualification：-
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Overview
The SH8KB6TB1 is a dual N-channel power MOSFET manufactured by ROHM Semiconductor, housed in an SOP-8 surface-mount package. It features a drain-source voltage rating of 40V and a continuous drain current of 8.5A at ambient temperature. The device exhibits low on-resistance, specified as 0.0182 ohms typ at Vgs=4.5V and 0.0149 ohms typ at Vgs=10V. Total gate charge is typically 5nC, with a power dissipation capacity of 2W. The component operates within a storage temperature range of -55°C to +150°C and supports drive voltages of 4.5V.
Feature Summary
- Dual N-channel configuration integrated into a compact SOP-8 surface-mount package for space-constrained designs.
- Low on-resistance characteristics optimized for efficient switching applications.
- Compliant with RoHS standards and featuring lead-free plating.
Applications
- General purpose switching circuits
- Motor driver applications
Procurement Notes
Verify the specific ordering suffix TB1 to confirm taping packaging and reel quantity specifications. Ensure compatibility with SOP-8 footprint requirements during PCB layout. Confirm that the application does not involve automotive equipment, as this standard-grade product is explicitly noted as unsuitable for such environments.
Selection Notes
Select this component when a dual N-channel MOSFET with 40V capability and low Rds(on) is required in an SOP-8 package. Consider the 2W power dissipation limit and thermal management needs. Verify that the 4.5V drive voltage requirement aligns with the system logic levels. Note that it is recommended for new designs unlike similar legacy parts.
Part Context
The SH8KB6TB1 belongs to the SH8K series of dual N-channel MOSFETs from ROHM. It serves as a recommended replacement for older variants like the SH8K26, which is no longer recommended for new designs. Both share the same SOP-8 package and pinout, facilitating direct board-level upgrades while offering improved electrical performance metrics.
Replacement Considerations
The SH8K26 is a confirmed substitute part number with identical package dimensions and pinout. However, the SH8K26 is marked as Not Recommended for New Designs, whereas the SH8KB6TB1 is the recommended active part. Electrical parameters differ slightly, requiring verification of current and resistance tolerances.
