SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The SH8KB7TB1 is a dual N-channel Power MOSFET manufactured by ROHM Semiconductor, housed in an HSOP-8 surface-mount package. It features a drain-source voltage (Vds) of 40 V and a continuous drain current (Id) of 24 A. The device exhibits a low on-resistance (Rds(on)) of 8 mΩ at Vgs = 10 V. Key electrical parameters include a gate-source voltage range of ±20 V, a threshold voltage (Vgs(th)) of 2.5 V, and a total gate charge (Qg) of 27 nC. The component supports power dissipation up to 26 W and operates within a temperature range of -55°C to +150°C.
Verify the specific ordering suffix TB1 to confirm the tape-and-reel packaging quantity of 2500 units. Ensure compatibility with standard HSOP-8 footprint dimensions during PCB layout. Confirm RoHS compliance status through official manufacturer documentation prior to final procurement decisions.
Select this component when a dual N-channel MOSFET with 40V rating and 24A current capacity is required in an HSOP-8 package. Compare Rds(on) values against system loss requirements. Verify that the 27 nC gate charge aligns with the driving circuit's capability for optimal switching speed without excessive drive current demands.
This part belongs to the HP8KB7 series of low on-resistance Power MOSFETs from ROHM Semiconductor. The series is designed specifically for switching applications where efficiency and thermal performance are critical. The HSOP-8 package provides a balance between power handling capabilities and small board area occupation compared to larger through-hole alternatives.
Direct substitutes must match the 40V/24A/Nch/Dual/HSOP-8 specification. Verify pinout compatibility and thermal resistance characteristics. Cross-reference datasheets for equivalent Rds(on) and Qg values to ensure no degradation in switching performance or thermal management.