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The SH8M11TB1 is a complementary power MOSFET manufactured by Rohm Semiconductor, featuring an N-channel and P-channel pair within a single SOP-8 package. It supports a drain-source voltage (V_DSS) of 30V with continuous drain currents (I_D) of 6.0A for the N-channel and 7.0A for the P-channel. Typical on-resistance (R_DS(on)) values are 0.033Ω at V_GS=4V for the N-channel. The device operates with a drive voltage of 4V, dissipates up to 2W of power, and has a typical total gate charge (Q_g) of 6.6nC. It is supplied in tape-and-reel packaging with a unit quantity of 2500.
Verify the specific ordering suffix TB1 to confirm the SOP-8 tape-and-reel packaging format. Confirm RoHS compliance status as indicated in the official datasheet documentation before finalizing procurement specifications.
Select this component for designs requiring a matched N-P pair in a small footprint. Ensure the application voltage remains below 30V and current demands do not exceed 6A or 7A per channel. Verify thermal dissipation requirements against the 2W power rating.
This part belongs to Rohm's complementary MOSFET series designed for general-purpose switching. It serves as a space-saving alternative to discrete N and P-channel installations in low-voltage power circuits.
The SH8MA3 is listed as a similar level replacement with the same SOP-8 package. Verify pinout compatibility and electrical parameter alignment before substitution.