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The SH8M13GZETB is a dual-channel power MOSFET manufactured by ROHM Semiconductor, integrating one N-channel and one P-channel silicon field-effect transistor within an SOP-8 surface-mount package. The device is engineered for low-voltage drive applications with a specified gate-source voltage of ±20 V and a drain-source breakdown voltage of 60 V. It supports continuous drain currents of ±7 A and features a maximum on-resistance (RDS(on)) ranging from 32 mΩ to 33 mΩ at the 4 V drive level. With a power dissipation rating of 2 W and a total gate charge of approximately 5 nC, the component operates across a temperature range of -55°C to +150°C.
Verify the specific suffix GZETB against the manufacturer's current datasheet to confirm packaging details and compliance status. Ensure the source document explicitly lists this part number as active or recommended for new designs, as some variants in the SH8M family may carry different supply statuses.
Select this component when a complementary N/P pair is required in a small footprint for 60V applications. Confirm that the 4V drive requirement aligns with the system's logic levels. Compare RDS(on) values at the specific operating gate voltage against alternative packages if thermal constraints are critical.
The SH8M13 belongs to ROHM's SH8M series of 4V drive complementary MOSFETs. This family shares common design characteristics such as the SOP-8 package and low on-resistance technology. Variants like SH8M11, SH8M12, and SH8M14 offer similar functionalities but differ in specific electrical parameters such as current handling and resistance values.
SH8M12GZETB and SH8M14GZETB are documented members of the same product family with identical SOP-8 packaging. Verify specific electrical parameter differences before substitution.