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Product Detailed Parameters
- Description：MOSFET N/P-CH 60V 4.5A 8SOP
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel
- FET Feature：-
- Drain to Source Voltage (Vdss)：60V
- Current - Continuous Drain (Id) @ 25°C：4.5A (Ta)
- Rds On (Max) @ Id, Vgs：65mOhm @ 4.5A, 10V, 70mOhm @ 4.5A, 10V
- Vgs(th) (Max) @ Id：3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：7nC @ 5V, 40nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：500pF @ 10V, 2500pF @ 10V
- Power - Max：2W (Ta)
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOP
- Grade：-
- Qualification：-
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Overview
The SH8M31GZETB is a dual complementary power MOSFET manufactured by ROHM Semiconductor, integrating one N-channel and one P-channel enhancement-mode transistor within an 8-SOP surface-mount package. The device features a drain-source breakdown voltage of 60V and supports continuous drain currents up to 8.5A. Typical on-resistance values are specified at 65mΩ for the N-channel and 70mΩ for the P-channel at a gate drive of 4.5V. Key switching parameters include a total gate charge of 12.3nC (Nch) and 38nC (Pch), with rise/fall times ranging from 10ns to 30ns. The component operates across a temperature range of -55°C to +150°C with a maximum power dissipation of 7W.
Feature Summary
- Integrates complementary N-channel and P-channel MOSFETs in a single compact SOP-8 package
- Optimized for low-voltage logic interface compatibility with a 4.5V drive voltage specification
- Designed for high-efficiency switching applications through minimized on-resistance and fast transition times
Applications
- Motor driver circuits requiring complementary switching pairs
- DC-DC converter output stages
- Low-voltage load switch implementations
Procurement Notes
Verify the specific ordering suffix against the manufacturer's current datasheet to ensure correct packaging and tape-and-reel specifications. Confirm RoHS compliance status and halogen-free certification requirements prior to procurement. Check for any recent product change notices that may affect pinout or thermal characteristics.
Selection Notes
Select this component when a matched N/P pair is required for synchronous rectification or half-bridge topologies. Ensure the 60V rating exceeds the maximum circuit voltage including transients. Verify that the 4.5V drive capability aligns with the system's logic level to guarantee full enhancement and minimal conduction losses.
Part Context
This part belongs to ROHM's SH8 series of small-signal and power MOSFETs designed for space-constrained applications. The SOP-8 footprint allows for higher density PCB layouts compared to larger packages while maintaining adequate thermal performance for moderate power levels.
Replacement Considerations
Direct replacements must match the 60V/8.5A rating and SOP-8 package. Consider the HP8M31TB1 as a potential alternative within the same family, noting differences in thermal resistance and specific Rds(on) tolerances.
