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Product Detailed Parameters
- Description：MOSFET N/P-CH 80V 3.4A/2.6A 8SOP
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：80V
- Current - Continuous Drain (Id) @ 25°C：3.4A, 2.6A
- Rds On (Max) @ Id, Vgs：130mOhm @ 3.4A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：9.2nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds：600pF @ 10V
- Power - Max：2W
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOP
- Grade：-
- Qualification：-
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Overview
The SH8M41TB1 is a complementary power MOSFET from ROHM Semiconductor, featuring an N-channel and P-channel pair within a single SOP8 surface-mount package. It offers a drain-source voltage (V_DSS) of 80V and a continuous drain current (I_D) of 3.4A. Typical on-resistance (R_DS(on)) values are 0.12Ω at V_GS=4V, 0.11Ω at V_GS=4.5V, and 0.09Ω at V_GS=10V. The device has a total gate charge (Q_g) of 6.6nC and power dissipation of 2W. It operates within a storage temperature range of -55°C to 150°C.
Feature Summary
- Complementary N+P polarity configuration in a compact SOP8 package
- Low on-resistance optimized for switching applications
- Lead-free plating compliant with RoHS directives
- Halogen-free construction
Applications
- General switching applications
- Power management circuits requiring complementary pairs
Procurement Notes
Verify the ordering part number SH8M41TB1 against official ROHM documentation to ensure correct component identification. Confirm that the application does not involve automotive equipment, as this standard-grade product is explicitly not recommended for such use. Check for any upcoming Product Change Notices (PCN) that may affect supply or specifications before finalizing procurement plans.
Selection Notes
Select the SH8M41TB1 when a compact complementary MOSFET solution is required for non-automotive switching tasks. Ensure the drive voltage aligns with the specified R_DS(on) conditions, typically 4V to 10V. Consider the 2W power dissipation limit and thermal management requirements for the SOP8 package during circuit design.
Part Context
The SH8M41TB1 belongs to ROHM's SH8 series of complementary power MOSFETs. This series provides integrated N-channel and P-channel devices in small surface-mount packages to save board space. The SH8M41 variant specifically targets 80V applications, distinguishing it from lower-voltage counterparts like the SH8M8 (30V).
Replacement Considerations
The SP8M41HZGTB is a verified automotive-grade replacement offering identical electrical characteristics and pinout but certified to AEC-Q101 standards. Verify compatibility if the original application requires automotive qualification.
