SH8MA2GZETB

Overview

The SH8MA2GZETB is a complementary power MOSFET manufactured by ROHM Semiconductor, featuring one N-channel and one P-channel transistor within a single SOP-8 package. It operates with a drain-source voltage (Vdss) of 30 V and supports a continuous drain current (Id) of 4.5 A. The device exhibits low on-resistance, specified at 0.088 Ω typical at Vgs = 4.5 V and 0.057 Ω typical at Vgs = 10 V. Total gate charge (Qg) is 1.5 nC, and power dissipation (Pd) reaches 2.7 W. Operating temperature ranges from -55 °C to +150 °C.

Feature Summary

• Complementary N-channel and P-channel configuration in a dual arrangement
• Low on-resistance optimized for efficient switching applications
• Halogen-free construction compliant with environmental standards

Applications

• General purpose switching circuits
• Power management modules
• DC-DC converter stages

Procurement Notes

Verify the specific ordering suffix GZETB against the manufacturer's official datasheet to ensure correct packaging and tape-and-reel specifications. Confirm RoHS compliance status directly from the latest documentation before procurement. Check supply availability as component status may vary over time.

Selection Notes

Select this component when a compact dual MOSFET solution is required for 30 V systems. The SOP-8 package suits surface mount designs with limited board space. Ensure drive voltages align with the 4.5 V or 10 V threshold requirements for optimal Rds(on) performance.

Part Context

This part belongs to ROHM's complementary MOSFET family designed for high-efficiency power switching. The SH8MA2 series integrates matched N and P channels to simplify circuit design compared to discrete components. It targets applications requiring reduced component count and improved thermal management in small form factors.

Replacement Considerations

SH8MA2TCR1 is listed as a similar level replacement with the same package type. Verify electrical parameters and pin compatibility before substitution.