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Product Detailed Parameters
- Description：MOSFET N/P-CH 30V 7A 8SOP
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：7A (Ta), 6A (Ta)
- Rds On (Max) @ Id, Vgs：28mOhm @ 7A, 10V, 50mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：7.2nC @ 10V, 10nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：300pF @ 15V, 480pF @ 15V
- Power - Max：2W (Ta)
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOP
- Grade：-
- Qualification：-
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Overview
The SH8MA3TB1 is a complementary power MOSFET from ROHM Semiconductor, integrating N-channel and P-channel devices in an SOP-8 surface-mount package. It features a drain-source voltage (V_DSS) of 30V and continuous drain currents (I_D) of 7.0A for the N-channel and 6.0A for the P-channel variant. Typical on-resistance (R_DS(on)) values are 0.042Ω at V_GS=4.5V and 0.023Ω at V_GS=10V for the N-channel, while the P-channel exhibits 0.033Ω at V_GS=4V. The total gate charge (Q_G) is typically 3.7nC, with a power dissipation (P_D) rating of 2.8W. The device operates within a storage temperature range of -55°C to 150°C.
Feature Summary
- Complementary N+P channel configuration in a single compact SOP-8 package
- Low on-resistance optimized for efficient switching applications
- Surface mount mounting style suitable for automated assembly
Applications
- General purpose switching circuits
- Motor drive applications
- Power supply output stages
Procurement Notes
Verify the specific ordering suffix and tape-and-reel quantity against current distributor catalogs. Confirm RoHS compliance status and lead times directly with authorized suppliers. Ensure the component matches the required polarity and voltage ratings for the target circuit design before procurement.
Selection Notes
Select this component for designs requiring integrated complementary MOSFETs in a small footprint. Compare R_DS(on) specifications at relevant gate drive voltages against alternative SOP-8 packages. Verify thermal management requirements based on the 2.8W power dissipation rating and ambient operating conditions.
Part Context
This part belongs to ROHM's 30V complementary MOSFET family, sharing the SOP-8 package code with variants like SH8M8 and SH8MA4. It serves as a standard-level discrete solution for low-to-medium power switching tasks. The SH8MA3TB1 designation specifically indicates the tape-and-reel packaging format for the SH8MA3 device.
Replacement Considerations
The SH8MA3TB1 is listed as a replacement for the SH8M8TB1, which shares the same SOP-8 package but may differ in current ratings or on-resistance characteristics. Verify electrical parameters carefully when substituting.
