SH8MC4TB1

$1.34

Description：MOSFET N/P-CH 60V 3.5A 8SOP
Series：-

SKU:219f6706bcdd Category: FET, MOSFET Arrays Brand: Rohm Semiconductor

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Product introduction

Product Detailed Parameters

Description：MOSFET N/P-CH 60V 3.5A 8SOP
Series：-
Mfr：Rohm Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：N and P-Channel
FET Feature：-
Drain to Source Voltage (Vdss)：60V
Current - Continuous Drain (Id) @ 25°C：3.5A (Ta), 4A (Ta)
Rds On (Max) @ Id, Vgs：95mOhm @ 3.5A, 10V, 96mOhm @ 4A, 10V
Vgs(th) (Max) @ Id：2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：3.1nC @ 10V, 17.3nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：135pF @ 30V, 850pF @ 30V
Power - Max：2W (Ta)
Operating Temperature：150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154", 3.90mm Width)
Supplier Device Package：8-SOP
Grade：-
Qualification：-

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SH8MC4TB1

Overview

The SH8MC4TB1 is a dual complementary power MOSFET from Rohm Semiconductor, integrating an N-channel and a P-channel device within a single SOP8 surface-mount package. The N-channel transistor supports a drain-source voltage of 60V with a continuous current rating of 3.5A, while the P-channel counterpart handles -60V at 4.0A. Both channels exhibit low on-state resistance, typically 95mΩ for the N-channel and 96mΩ for the P-channel at 10V gate drive. The component operates across a junction temperature range of -55°C to +150°C and features a total power dissipation capacity of 2.0W.

Feature Summary

Low on-state resistance for efficient switching performance
Compact SOP8 surface mount package design
Lead-free plating compliant with RoHS standards
Halogen-free material composition

Applications

Switching circuits
Motor drives

Procurement Notes

Verify the specific suffix TB1 corresponds to the embossed tape reel packaging configuration containing 2500 units per reel. Confirm that the ordering part number matches the exact electrical characteristics required for the target application circuit. Ensure compliance with RoHS and halogen-free requirements if mandated by the end-product specifications.

Selection Notes

Select this component when a compact dual complementary MOSFET solution is required for 60V applications. The integrated N-channel and P-channel pair simplifies layout compared to discrete components. Verify thermal management capabilities, as the total power dissipation is limited to 2.0W in free air conditions without significant copper board heat sinking.

Part Context

This component belongs to the SH8MC4 series of complementary power MOSFETs manufactured by Rohm Semiconductor. It is designed specifically for space-constrained surface-mount applications requiring both high-side and low-side switching capabilities within a single footprint.