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The SH8MC5TB1 is a dual complementary N+P channel power MOSFET manufactured by Rohm Semiconductor. It integrates two 60V MOSFETs in a compact SOP8 surface-mount package. The device features a drain current rating of 6.5A and low on-resistance values of 0.033Ω at VGS=4.5V and 0.025Ω at VGS=10V. Key electrical parameters include a total gate charge of 3.9nC, a drive voltage of 4.5V, and a power dissipation capacity of 2W. The component operates within a storage temperature range of -55°C to 150°C.
Verify the specific ordering suffix TB1 against the manufacturer's official documentation to confirm tape-and-reel packaging details. Ensure compatibility with standard SOP8 footprint dimensions during PCB layout. Confirm RoHS compliance status through the latest datasheet revision before finalizing procurement specifications.
Select this component for designs requiring integrated N-channel and P-channel control in a small form factor. Evaluate thermal management requirements given the 2W power dissipation limit. Compare on-resistance performance at the target gate drive voltage against alternative devices to ensure optimal circuit efficiency.
This part belongs to Rohm's SH8MC series of dual complementary power MOSFETs. It shares the SOP8 package code with similar variants like SH8KC5 and HP8MC5 but differs in polarity configuration and specific electrical ratings. The series targets general-purpose switching and motor control applications.
Direct substitutes include SH8MC4TB1 (30V/40V variants) or SH8KC5TB1 (dual N-channel). Verify voltage ratings and pinout compatibility when considering cross-series replacements from the same manufacturer.