ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET 100V 4.5A 8SOP
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：-
- FET Feature：-
- Drain to Source Voltage (Vdss)：100V
- Current - Continuous Drain (Id) @ 25°C：4.5A (Ta)
- Rds On (Max) @ Id, Vgs：58mOhm @ 4.5A, 10V, 91mOhm @ 4.5A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：6.7nC @ 10V, 52nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：305pF @ 50V, 2100pF @ 50V
- Power - Max：2W (Ta)
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOP
- Grade：-
- Qualification：-
Download product information
Overview
The SH8ME5TB1 is a dual complementary power MOSFET manufactured by ROHM Semiconductor, integrating one N-channel and one P-channel transistor within an SOP-8 surface-mount package. The device supports a drain-source voltage of ±100V with a continuous drain current rating of ±4.5A. It features low on-state resistance, specified at a maximum of 58mΩ for the N-channel and 91mΩ for the P-channel at VGS = 10V. The component operates across a junction temperature range of -55°C to +150°C with a total power dissipation capability of 2.0W.
Feature Summary
- Complementary N-channel and P-channel configuration in a single small surface-mount package
- Low on-state resistance optimized for switching applications
- Lead-free plating compliant with RoHS standards and halogen-free construction
Applications
- Switching circuits for general electronic equipment
- Motor drive interfaces for cooling fans
- Power management stages in factory automation systems
Procurement Notes
Verify the specific ordering suffix TB1 corresponds to the required tape-and-reel packaging format before procurement. Confirm that the application environment remains within standard operating conditions, as the datasheet explicitly excludes automotive use. Ensure proper handling precautions are implemented due to electrostatic sensitivity during storage and mounting processes.
Selection Notes
Select this component when a compact dual-transistor solution is required for 100V logic-level switching. Evaluate thermal performance against the specified junction-to-ambient resistance values based on the target PCB copper area. Verify that the gate drive voltage aligns with the threshold characteristics to ensure optimal conduction and minimize switching losses.
Part Context
This part belongs to the SH8ME5 series of complementary MOSFETs designed for space-constrained designs. It serves as a direct replacement for older discrete N-channel and P-channel pairs, simplifying layout and reducing component count in bridge driver or load switch topologies requiring high voltage isolation.
Replacement Considerations
SH8ME5TCR (TSMT8 package variant)
FAQ
Is the SH8ME5TB1 suitable for automotive applications?
No, the manufacturer explicitly states that this product is not recommended for use in automotive equipment.
What is the maximum pulsed drain current rating?
The absolute maximum ratings specify a pulsed drain current of ±18A, provided the pulse width is less than or equal to 10μs and the duty cycle does not exceed 1%.
How does the on-state resistance vary with gate voltage?
The datasheet specifies RDS(on) at both VGS = 10V and VGS = 4.5V. For example, the N-channel RDS(on) increases from a maximum of 58mΩ at 10V to 84mΩ at 4.5V.
