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The SHGTG40N60A4 is a field-stop IGBT manufactured by onsemi, housed in a TO-247 package. It features a maximum collector-emitter voltage of 600 V and a continuous collector current of 40 A at 100°C. The device exhibits a typical saturation voltage of 1.9 V at 40 A and an off-state energy loss of 6.5 µJ/A. Designed for high-efficiency power conversion, it supports junction temperatures up to 175°C and includes an integrated anti-parallel diode.
Verify the specific suffix 'SH' against official datasheets to confirm packaging variations or tape-and-reel specifications. Ensure compatibility with existing thermal management designs given the 175°C junction rating. Cross-reference ordering information directly with onsemi documentation to avoid discrepancies in marking or pinout configurations.
Select this component for applications requiring low conduction losses and high current density in the 600V range. The positive temperature coefficient simplifies paralleling multiple units for higher current capacity. Evaluate thermal resistance requirements based on the TO-247 flange mount configuration and expected ambient operating conditions.
This part belongs to onsemi's second-generation field-stop IGBT series, designed to replace older technologies in high-efficiency converters. It shares functional similarities with other 600V/40A devices in the family but offers improved switching characteristics and lower saturation voltage compared to previous generations.
Direct substitutes include FGH40N60SMD and HGTG40N60A4. Verify pinout compatibility and thermal resistance values before substitution. Ensure the replacement device meets the same voltage and current ratings for the target application.