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Product Detailed Parameters
- Description：MOSFET N/P-CH 20V SC89
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：-
- Rds On (Max) @ Id, Vgs：396mOhm @ 500mA, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：2nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：43pF @ 10V
- Power - Max：220mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-563, SOT-666
- Supplier Device Package：SC-89 (SOT-563F)
- Grade：-
- Qualification：-
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Overview
The SI1016CX-T1-GE3 is a complementary N- and P-channel MOSFET from Vishay Siliconix, utilizing TrenchFET technology. It features a 20 V drain-source voltage rating for both channels. The N-channel exhibits an on-resistance of 0.396 Ω at VGS = 4.5 V with a typical gate charge of 0.75 nC. The P-channel has an on-resistance of 0.756 Ω at VGS = -4.5 V and a typical gate charge of 1 nC. Both channels operate within a junction temperature range of -55 °C to +150 °C. The device is housed in a surface-mount SC-89 dual package.
Feature Summary
- Complementary N- and P-channel configuration in a single package
- TrenchFET power MOSFET technology for low on-resistance
- High-speed switching capability with low gate charge
- Low offset voltage suitable for small signal applications
Applications
- Load switches
- Small signal switches
- Level-shift switches
- Battery operated systems
- Portable devices
Procurement Notes
Verify the component against the official Vishay datasheet (Document Number: 67535) to confirm specifications. Ensure the ordering suffix matches the lead-free and halogen-free requirement specified for the SI1016CX-T1-GE3 variant. Cross-reference the marking code '5' on the package to validate authenticity and correct part identification during procurement.
Selection Notes
Select this component for applications requiring low-voltage operation and high-speed switching. The complementary nature allows for efficient level-shifting and load switching in portable electronics. Consider the thermal resistance ratings and maximum power dissipation limits when designing for steady-state or pulsed conditions to ensure reliable performance within the specified operating temperature range.
Part Context
This part belongs to the Si1016CX series of complementary MOSFETs manufactured by Vishay Siliconix. It is designed as a compact solution for managing multiple switching functions in space-constrained environments. The SC-89 package provides a dual-channel configuration that integrates both N-channel and P-channel devices into a single footprint.
Replacement Considerations
No public confirmed substitute part numbers are available in the provided documentation.
FAQ
What is the maximum gate-source voltage rating?
The absolute maximum gate-source voltage rating is ± 8 V for both the N-channel and P-channel.
What is the typical ESD protection rating?
The typical ESD protection rating is 900 V Human Body Model (HBM) for both the N-channel and P-channel.
What is the marking code for this component?
The marking code for the SI1016CX-T1-GE3 is '5'.
