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Product Detailed Parameters
- Description：MOSFET 2P-CH 20V 0.37A SC89
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：370mA
- Rds On (Max) @ Id, Vgs：1.2Ohm @ 350mA, 4.5V
- Vgs(th) (Max) @ Id：450mV @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs：1.5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：250mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-563, SOT-666
- Supplier Device Package：SC-89 (SOT-563F)
- Grade：-
- Qualification：-
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Overview
The Vishay Siliconix SI1023X-T1-E3 is a dual P-channel MOSFET utilizing TrenchFET technology, rated for a drain-source voltage of -20 V. It operates with gate-source voltages up to ±6 V and features a low on-resistance of 1.2 Ω at VGS = -4.5 V. The device supports continuous drain currents of -370 mA at 25 °C and includes an integrated body diode with a forward voltage of approximately 0.8 V at -150 mA. Packaged in a SC-89 (SOT-563) footprint, it offers fast switching speeds with turn-on times around 14 ns and provides 2000 V ESD protection.
Feature Summary
- TrenchFET power MOSFET architecture optimized for low on-resistance and high-speed switching
- Capable of direct operation from 1.8 V logic levels for battery-powered applications
- Integrated body diode with low forward voltage drop for efficient load switching
- High electrostatic discharge (ESD) protection rating of 2000 V on the gate-source terminals
Applications
- Drivers for relays, solenoids, lamps, hammers, displays, and memories
- Battery-operated systems requiring low offset error voltage
- Power supply converter circuits and load/power switching in cell phones and pagers
Procurement Notes
Verify the specific ordering suffix when sourcing components. The datasheet lists Si1023X-T1-GE3 as the lead-free and halogen-free variant compliant with RoHS Directive 2002/95/EC. Confirm that the received part matches the required environmental compliance and package marking code B before integration into production assemblies.
Selection Notes
Select this component for high-side switching applications where low offset voltage and small footprint are critical. Ensure the design accommodates the maximum power dissipation limits of 250 mW at 85 °C. Verify that the gate drive voltage remains within the ±6 V absolute maximum rating to prevent damage to the oxide layer during operation.
Part Context
This device belongs to the Vishay Siliconix Si10 series of dual P-channel MOSFETs. It shares the SC-89 surface-mount package with other members like the SI1013X and SI1024X. The series is designed for portable electronics, offering a balance of performance and size suitable for space-constrained mobile devices.
Replacement Considerations
Check for alternative dual P-channel MOSFETs in the SC-89 package with comparable RDS(on) and VGS ratings. Ensure any substitute maintains the same pinout configuration and thermal characteristics to avoid redesigning the PCB layout or driver circuitry.
FAQ
What is the typical gate threshold voltage for the SI1023X?
The typical gate threshold voltage (VGS(th)) is 0.45 V, measured at VDS = VGS and ID = -250 µA.
Does the SI1023X support 1.8 V logic operation?
Yes, the device is rated for 1.8 V operation, with an on-resistance of 2.7 Ω specified at VGS = -1.8 V.
What is the maximum operating junction temperature?
The maximum operating junction temperature range extends up to +150 °C.
