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Product Detailed Parameters
- Description：MOSFET 2P-CH 60V 0.19A SC89
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：60V
- Current - Continuous Drain (Id) @ 25°C：190mA
- Rds On (Max) @ Id, Vgs：4Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：1.7nC @ 15V
- Input Capacitance (Ciss) (Max) @ Vds：23pF @ 25V
- Power - Max：250mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-563, SOT-666
- Supplier Device Package：SC-89 (SOT-563F)
- Grade：-
- Qualification：-
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Overview
The SI1025X-T1-E3 is a P-Channel MOSFET from the Vishay Siliconix SI1 series, utilizing TrenchFET technology. It features a drain-to-source voltage of 60V and a continuous drain current of 0.19A. The device operates with a logic-level gate threshold and exhibits a maximum on-resistance of 4.5 Ohms at Vgs = -4.5V. Key electrical parameters include an input capacitance of 23pF at 25V and a gate charge of 0.6nC at 4.5V. Power dissipation is rated at 250mW, with a junction temperature range of -55°C to 150°C. It is housed in a SC-89 (SOT-563F) surface-mount package.
Feature Summary
- Employs TrenchFET technology for optimized performance
- Features logic-level gate drive capability
- Designed for compact surface-mount applications
Applications
- Battery protection circuits
- Power management systems
- Portable electronic devices
Procurement Notes
Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status and check for obsolescence notices, as lifecycle status may vary by region. Ensure storage conditions align with semiconductor handling standards to prevent damage prior to assembly.
Selection Notes
Select this component for low-current switching applications requiring a 60V P-Channel MOSFET. Consider the 4.5 Ohm on-resistance and 0.19A current limit when designing power paths. Verify that the SC-89 footprint matches the PCB layout requirements and that the logic-level gate threshold suits the control voltage.
Part Context
This part belongs to the SI1 series of small-signal MOSFETs from Vishay Siliconix. It is functionally similar to the SI1024X and SI1026X models within the same family, sharing the SC-89 package and TrenchFET architecture but differing in specific electrical ratings such as current and resistance.
Replacement Considerations
Potential substitutes include SI1024X-T1-E3 and SI1026X-T1-E3. Verify pinout compatibility and electrical parameter alignment before substitution. Check datasheets for differences in on-resistance and current handling capabilities.
