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Product Detailed Parameters
- Description：MOSFET 2N-CH 60V 0.305A SC89
- Series：-
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：60V
- Current - Continuous Drain (Id) @ 25°C：305mA
- Rds On (Max) @ Id, Vgs：1.4Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.6nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：30pF @ 25V
- Power - Max：250mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-563, SOT-666
- Supplier Device Package：SC-89 (SOT-563F)
- Grade：-
- Qualification：-
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Overview
The Vishay Siliconix SI1026X-T1-E3 is an N-channel MOSFET utilizing TrenchFET technology, housed in a SC-89 (SOT-563F) surface-mount package. It features a drain-source voltage rating of 60 V and a continuous drain current of 305 mA at 25 °C. The device exhibits a low on-resistance of 1.40 Ω at VGS = 10 V and a typical gate threshold voltage of 2 V. Dynamic characteristics include a total gate charge of 600 pC, input capacitance of 30 pF, and switching times of 15 ns turn-on and 20 ns turn-off. Operating junction temperature ranges from -55 °C to 150 °C.
Feature Summary
- TrenchFET power MOSFET technology for optimized performance
- Halogen-free construction compliant with IEC 61249-2-21
- ESD protection rated at 2000 V via Human Body Model
- Miniature SC-89 package designed for small board area
Applications
- Drivers for relays, solenoids, lamps, hammers, displays, memories, and transistors
- Battery operated systems
- Solid-state relays
Procurement Notes
Verify the specific ordering suffix against official documentation before procurement. The datasheet lists Si1026X-T1-GE3 as the lead-free and halogen-free variant. Confirm that the requested part number matches the exact environmental compliance and packaging requirements specified by the manufacturer.
Selection Notes
Select this component for applications requiring a 60 V N-channel switch with low offset voltage and high-speed operation. Ensure the design accommodates the 1.40 Ω on-resistance at the intended gate drive voltage. Verify thermal management capabilities within the SC-89 package limits for the expected duty cycle and ambient temperature conditions.
Part Context
This component belongs to the Vishay Siliconix Si1026X series of miniature N-channel MOSFETs. It utilizes TrenchFET technology to achieve low on-resistance and fast switching speeds within a compact SC-89 footprint. The series is designed for low-voltage, high-speed circuit applications where board space is constrained.
Replacement Considerations
Consult the official Vishay datasheet or contact authorized representatives for confirmed substitute part numbers. Do not assume cross-compatibility with other series without verifying electrical parameters and pin configurations.
