SI1033X-T1-GE3

Description：MOSFET 2P-CH 20V 0.145A SC89
Series：TrenchFET®

SKU:c35bdb926c42 Category: FET, MOSFET Arrays Brand: Vishay Siliconix

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Product introduction

Product Detailed Parameters

Description：MOSFET 2P-CH 20V 0.145A SC89
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：2 P-Channel (Dual)
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：20V
Current - Continuous Drain (Id) @ 25°C：145mA
Rds On (Max) @ Id, Vgs：8Ohm @ 150mA, 4.5V
Vgs(th) (Max) @ Id：1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：1.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：-
Power - Max：250mW
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：SOT-563, SOT-666
Supplier Device Package：SC-89 (SOT-563F)
Grade：-
Qualification：-

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SI1033X-T1-GE3

Overview

The SI1033X-T1-GE3 is a single N-channel MOSFET manufactured by Vishay Siliconix using silicon technology. It utilizes the TrenchFET power FET architecture and is housed in an SC-89-6 surface-mount package. The device features a drain-source voltage rating of 20V and a continuous drain current of 150mA. Its maximum power dissipation is specified at 280mW. The on-resistance is 8.0 ohms when measured at a gate-source voltage of 4.5V.

Feature Summary

Employs TrenchFET technology for optimized performance characteristics
Designed for surface-mount installation via SC-89-6 packaging

Applications

Battery protection circuits
Power management applications
General-purpose switching tasks

Procurement Notes

Verify component authenticity through authorized distribution channels or direct manufacturer engagement. Confirm RoHS compliance status and specific datasheet revisions prior to integration. Ensure storage conditions align with semiconductor handling standards to maintain device integrity throughout the supply chain process.

Selection Notes

Select this component for low-current switching requirements where a 20V breakdown voltage is sufficient. The SC-89-6 package offers a compact footprint suitable for space-constrained designs. Evaluate thermal management needs against the 280mW dissipation limit during operation.

Part Context

This part belongs to the SI1 series of MOSFETs from Vishay Siliconix. It represents a discrete single-channel N-type transistor within the broader portfolio of silicon-based power switching devices offered by the manufacturer.