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Product Detailed Parameters
- Description：MOSFET 2N-CH 20V 0.61A SC89
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：610mA (Ta)
- Rds On (Max) @ Id, Vgs：396mOhm @ 500mA, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：2nC @ 8V
- Input Capacitance (Ciss) (Max) @ Vds：43pF @ 10V
- Power - Max：220mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-563, SOT-666
- Supplier Device Package：SC-89 (SOT-563F)
- Grade：-
- Qualification：-
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Overview
The Vishay Siliconix SI1034CX-T1-GE3 is a dual N-channel enhancement mode MOSFET utilizing TrenchFET technology. It features a 20 V drain-source voltage rating and operates within a junction temperature range of -55 °C to +150 °C. The device provides a maximum continuous drain current of 0.61 A at 25 °C, with an on-state resistance of 0.396 Ω at VGS = 4.5 V. Packaged in a surface-mount SC-89 (SOT-563F) housing with six leads, it offers low gate charge and high ESD protection.
Feature Summary
- Dual N-channel configuration for compact circuit integration
- TrenchFET power MOSFET architecture for optimized performance
- Gate-source ESD protection rated at 1000 V
- Lead-free and halogen-free material compliance
Applications
- Load and power switching for portable devices
- Drivers for relays, solenoids, lamps, hammers, displays, and memories
- Battery-operated systems
- Power supply converter circuits
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm lead-free and halogen-free status. Confirm package dimensions match the SC-89 specification before implementation. Ensure thermal management aligns with the stated junction-to-ambient resistance ratings for the intended operating environment.
Selection Notes
Select this component for applications requiring dual N-channel control in a minimal footprint. Evaluate the 0.396 Ω on-resistance against load requirements at the target gate drive voltage. Consider the 20 V breakdown limit and 0.61 A continuous current capability relative to peak operational demands.
Part Context
This part belongs to the Vishay Siliconix Si1034 series, designed as dual N-channel MOSFETs. It utilizes the SC-89 package to provide two independent channels in a single surface-mount housing. The product line emphasizes low on-resistance and fast switching characteristics suitable for portable electronics.
Replacement Considerations
Consult official cross-reference lists for verified substitutes. Verify that any replacement maintains the 20 V VDS rating, dual channel configuration, and SC-89 pinout compatibility.
