SI1035X-T1-E3

Overview

The Vishay Siliconix SI1035X-T1-E3 is a complementary N- and P-channel MOSFET in an SC-89 package. It features TrenchFET technology with a 20 V drain-source voltage rating. The N-channel exhibits a maximum on-resistance of 5 Ω at VGS = 4.5 V, while the P-channel shows 8 Ω at VGS = -4.5 V. Continuous drain current reaches 190 mA for the N-channel and -155 mA for the P-channel at 25 °C. The device supports 1.5 V operation, has a typical gate threshold voltage of ±0.9 V, and offers a 2000 V gate-source ESD rating.

Feature Summary

• Complementary N- and P-channel configuration within a single six-lead surface-mount package
• TrenchFET power MOSFET architecture enabling low on-resistance and fast switching speeds
• Capable of direct 1.5 V logic-level operation with low offset error voltage
• Integrated gate-source electrostatic discharge protection rated at 2000 V

Applications

• Battery operated systems requiring low-voltage switching
• Power supply converter circuits
• Load and power switching for cell phones and pagers
• Replacement for digital transistors and level-shifters

Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status and check for Halogen-free certification per IEC 61249-2-21 standards. Validate that the ordering suffix matches the lead-free specification. Ensure storage conditions adhere to recommended temperature ranges to maintain device reliability prior to assembly.

Selection Notes

Select this component for applications demanding minimal footprint and low-voltage compatibility. Evaluate thermal performance against the specified junction-to-ambient resistance when designing for continuous operation. Consider the specific on-resistance values at target gate voltages to ensure adequate current handling. Verify that the required switching speed aligns with the typical turn-on and turn-off time parameters provided in the datasheet.

Part Context

This part belongs to the Vishay Siliconix Si1035X series, which provides complementary MOSFET solutions. The standard ordering designation is Si1035X-T1-GE3, indicating the lead-free and halogen-free variant. The device utilizes the SC-89 (SOT-563F) package, offering a compact form factor suitable for space-constrained portable electronics and mobile communication devices.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the verified documentation.

FAQ

What is the maximum gate-source voltage rating?

The absolute maximum gate-source voltage rating is ±5 V.

Does the device support 1.5 V operation?

Yes, the datasheet specifies that the device is designed for 1.5 V operation.

What is the typical total gate charge for the N-channel?

The typical total gate charge (Qg) for the N-channel is 750 pC under test conditions of VDS = 10 V, VGS = 4.5 V, and ID = 150 mA.