SI1036X-T1-GE3

Overview

The Vishay Siliconix SI1036X-T1-GE3 is a dual N-channel enhancement mode MOSFET utilizing TrenchFET technology. It features a 30 V drain-source voltage rating and operates within a junction temperature range of -55 °C to +150 °C. The device provides a maximum continuous drain current of 0.6 A at 25 °C, with an on-state resistance (RDS(on)) ranging from 0.450 Ω to 1.100 Ω depending on the gate-source voltage. Total gate charge is typically 0.72 nC at VGS = 4.5 V. Packaged in a surface-mount SC-89 (SOT-563F) housing with six leads, it supports applications requiring high-speed switching.

Feature Summary

• Dual N-channel configuration housed in a compact SC-89 package
• TrenchFET power MOSFET architecture for optimized performance
• Gate-source ESD protection rated at 1000 V
• Lead-free and halogen-free material composition

Applications

• Load switch circuits
• High speed switching applications
• DC/DC converters and boost converters
• Smart phones, tablet PCs and mobile computing devices

Procurement Notes

Verify component authenticity by checking the marking code 'B' on the top surface of the SC-89 package. Confirm that the part number suffix matches the lead-free and halogen-free specification. Ensure the ordering information aligns with the official Vishay datasheet document number 62932 before finalizing procurement.

Selection Notes

Select this component when a dual N-channel MOSFET is required in a small footprint. Evaluate the RDS(on) values against the specific gate drive voltage available in the design. Consider the thermal resistance ratings and safe operating area curves to ensure adequate heat dissipation under expected load conditions.

Part Context

This component belongs to the Vishay Siliconix TrenchFET family of power MOSFETs. It is designed as a surface-mount solution for portable electronics. The dual configuration allows for independent control of two channels within a single six-lead package, optimizing board space compared to using discrete single-channel devices.

Replacement Considerations

Publicly confirmed substitute part numbers are not provided in the verified source material.

FAQ

What is the maximum gate-source voltage rating?

The absolute maximum gate-source voltage rating is ± 8 V.

How does the on-state resistance vary with gate voltage?

RDS(on) decreases as gate-source voltage increases, ranging from 1.100 Ω at VGS = 1.5 V to 0.450 Ω at VGS = 4.5 V.

What is the body diode reverse recovery time?

The typical body diode reverse recovery time is 8 ns, with a maximum of 15 ns under specified test conditions.