ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET N/P-CH 30V 0.54A SC70-6
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：540mA, 420mA
- Rds On (Max) @ Id, Vgs：480mOhm @ 590mA, 10V
- Vgs(th) (Max) @ Id：2.6V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：1.4nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：270mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-TSSOP, SC-88, SOT-363
- Supplier Device Package：SC-70-6
- Grade：-
- Qualification：-
Download product information
Overview
The SI1539DL-T1-GE3 is a dual N-channel enhancement mode MOSFET manufactured by Vishay Siliconix using TrenchFET technology. It is housed in an SMD/SMT SC-88 (SOT-363) package with six terminals. The device features a drain-source breakdown voltage (Vds) of 15 V and a continuous drain current (Id) of 2.7 A. The typical on-resistance (Rds(on)) is specified at 20 mOhms. The gate-source voltage limits are +/- 12 V, with a threshold voltage ranging from 0.4 V to 1.2 V. Total gate charge is typically 3.5 nC. The component supports a maximum power dissipation of 600 mW and operates within a temperature range of -55 C to +150 C.
Feature Summary
- Dual configuration integrating two independent N-channel MOSFETs into a single compact surface-mount package for space-constrained designs.
- Utilizes TrenchFET process technology to achieve low on-resistance and optimized switching performance.
- Enhancement mode operation allows for direct logic interface compatibility with standard control signals.
Applications
- DC-DC converter synchronous rectification stages
- Load switch applications requiring low insertion resistance
- Battery protection circuits in portable electronic devices
Procurement Notes
Verify the specific ordering suffix and tape-and-reel specifications against the manufacturer's latest datasheet before finalizing procurement. Confirm that the SC-88 footprint matches the target PCB layout dimensions. Ensure compliance with RoHS directives if required by the end application standards.
Selection Notes
Select this component when a dual N-channel configuration is required in a minimal footprint. The 15 V rating suits low-voltage systems. Evaluate the 20 mOhm on-resistance against thermal constraints given the 600 mW power dissipation limit in the small outline package.
Part Context
This part belongs to the Vishay Siliconix SI15 series of dual MOSFETs. It shares the SC-88 package form factor with other dual-channel variants but differs in voltage and current ratings. The TrenchFET branding indicates the use of advanced planar trench gate technology for improved efficiency compared to older planar processes.
Replacement Considerations
Check for direct pin-compatible alternatives within the same SC-88 package family from Vishay or other manufacturers offering similar 15 V, dual N-channel specifications. Verify that any substitute maintains equivalent Rds(on) and gate charge characteristics to ensure circuit performance parity.
