ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET N/P-CH 20V SC70-6
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：1.13A, 880mA
- Rds On (Max) @ Id, Vgs：280mOhm @ 1.13A, 4.5V
- Vgs(th) (Max) @ Id：1V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs：2nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：570mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-TSSOP, SC-88, SOT-363
- Supplier Device Package：SC-70-6
- Grade：-
- Qualification：-
Download product information
Overview
The SI1563DH-T1-E3 is a silicon N-channel MOSFET from the Vishay Siliconix SI1 series, utilizing TrenchFET technology. It is housed in an SC-70 (SOT-323) surface-mount package. The device operates with a single supply and features a maximum power dissipation of 320 mW. Key electrical characteristics include a drain-source voltage rating of -20 V and a gate-source voltage limit of 8 V. The component supports continuous DC switch currents up to 300 mA. It functions within an ambient temperature range of -40°C to +85°C and draws a maximum supply current of 1 µA.
Feature Summary
- Utilizes TrenchFET technology for optimized performance
- Designed for single-supply operation
- Compact SC-70 surface-mount packaging
Applications
- Battery-powered portable devices
- Power management circuits
- Load switching applications
Procurement Notes
Verify the specific suffix and manufacturer details against official datasheets before integration. Confirm RoHS compliance status through current environmental documentation. Check for end-of-life notifications or discontinuance notices directly from Vishay Semiconductors. Ensure the source document explicitly identifies this part number as evidence of specifications.
Selection Notes
Select this component for low-voltage applications requiring compact SMD solutions. Verify that the -20 V drain-source voltage and 8 V gate-source limits meet circuit requirements. Consider the 320 mW power dissipation capability for thermal management. Confirm compatibility with single-supply architectures and required operating temperature ranges.
Part Context
This part belongs to the Vishay Siliconix SI1 series of N-channel MOSFETs. It shares the TrenchFET branding and SC-70 package form factor with related models like SI1913DH-T1-E3. The product line focuses on low-voltage power switching solutions for space-constrained electronic designs.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Consult official Vishay resources for potential alternatives if this component is discontinued.
