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Product Detailed Parameters
- Description：MOSFET N/P-CH 20V SC70-6
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：1.13A, 880mA
- Rds On (Max) @ Id, Vgs：280mOhm @ 1.13A, 4.5V
- Vgs(th) (Max) @ Id：1V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs：1nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：570mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-TSSOP, SC-88, SOT-363
- Supplier Device Package：SC-70-6
- Grade：-
- Qualification：-
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Overview
The SI1563EDH-T1-E3 is a dual N-channel MOSFET from the Vishay Siliconix SI1 series, utilizing TrenchFET technology. It is housed in an SOT-363-6 surface-mount package. The device integrates two independent N-channel transistors within a single compact footprint, designed for low-voltage switching applications. Key electrical parameters include a drain-source voltage (Vds) of -20V and a gate-source voltage (Vgs) rating of ±12V. The component operates on silicon technology and complies with RoHS standards. It is supplied in reel or cut tape formats, with a standard factory packaging quantity of 3000 units per reel.
Feature Summary
- Dual N-channel configuration integrating two independent switches in a single package
- TrenchFET technology for optimized performance characteristics
- Compact SMD/SMT installation style suitable for space-constrained designs
Applications
- Load switch control circuits
- Small signal power management modules
- Portable electronic device power regulation
Procurement Notes
Verify current availability status as the component may be subject to obsolescence notices. Confirm that the specific suffix corresponds to the required lead-free and halogen-free specifications. Ensure compatibility with existing PCB footprints for the SOT-363-6 package during procurement planning.
Selection Notes
Select this component when a dual N-channel solution is required in a minimal footprint. Verify that the -20V Vds rating meets the circuit's maximum voltage requirements. Consider the thermal performance characteristics inherent to the SOT-363-6 package for heat dissipation needs.
Part Context
This part belongs to the Vishay Siliconix SI1 series of small-signal MOSFETs. These components are widely used in consumer electronics and portable devices due to their low profile and efficient switching capabilities. The SI1563EDH variant specifically provides dual functionality, reducing board space compared to using discrete single transistors.
Replacement Considerations
Check for direct substitutes within the SI1 series that offer similar pin configurations and electrical ratings. Verify if newer generations of TrenchFET devices provide improved Rds(on) values while maintaining package compatibility.
