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Product Detailed Parameters
- Description：MOSFET 2N-CH 20V 1A SC70-6
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：1A (Ta), 1.1A (Tc)
- Rds On (Max) @ Id, Vgs：235mOhm @ 1A, 4.5V
- Vgs(th) (Max) @ Id：1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：3nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：62pF @ 10V
- Power - Max：300mW (Ta), 420mW (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-TSSOP, SC-88, SOT-363
- Supplier Device Package：SC-70-6
- Grade：-
- Qualification：-
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Overview
The SI1902CDL-T1-BE3 is a dual N-channel MOSFET from Vishay Siliconix utilizing TrenchFET technology. It features a 20 V drain-source voltage rating and operates within a junction temperature range of -55 °C to +150 °C. The device provides a maximum continuous drain current of 1 A at ambient temperature and 1.1 A at case temperature, with a corresponding power dissipation of 300 mW (Ta) and 420 mW (Tc). On-state resistance is specified at 0.235 Ω at VGS = 4.5 V and 0.306 Ω at VGS = 2.5 V. Total gate charge reaches a maximum of 3 nC at VGS = 10 V. The component is housed in an SC-70 surface-mount package.
Feature Summary
- Dual N-channel configuration integrated into a single compact SC-70 package
- TrenchFET power MOSFET architecture for optimized performance
- 100% gate resistance tested during manufacturing
Applications
- Load switch applications for portable devices
- DC/DC converter circuits for portable devices
- High speed switching implementations
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm compliance requirements. The BE3 suffix indicates lead-free and halogen-free material categorization. Confirm that the required package variant matches the SC-70 footprint. Ensure technical specifications align with the target application parameters before finalizing procurement decisions.
Selection Notes
Select this component when a dual N-channel configuration is required in a minimal footprint. Evaluate thermal constraints carefully as the device has low power dissipation ratings. Verify that the 20 V breakdown voltage meets the circuit requirements. Consider the on-resistance values at the intended gate drive voltages to ensure adequate current handling capabilities.
Part Context
This part belongs to the Si1902CDL series manufactured by Vishay Siliconix. It is designed specifically for space-constrained portable electronics. The dual channel design allows for efficient implementation of bridge or load-switch topologies without occupying additional board area compared to single-channel alternatives.
Replacement Considerations
The datasheet lists SI1902CDL-T1-GE3 as the lead-free and halogen-free alternative. Verify pinout compatibility and electrical parameter equivalence before substituting other dual N-channel MOSFETs in the SC-70 package.
