SI1902DL-T1-BE3

Overview

The Vishay Siliconix SI1902DL-T1-BE3 is a dual N-channel MOSFET utilizing TrenchFET technology, housed in an SC-70 (SOT-363) surface-mount package. It features a drain-source voltage rating of 20 V and a continuous drain current of 0.70 A at 25 °C. The device offers a maximum on-state resistance of 0.385 Ω at VGS = 4.5 V and 0.630 Ω at VGS = 2.5 V. Key dynamic parameters include a typical total gate charge of 0.8 nC and a forward transconductance of 1.5 S. Operating junction temperatures range from -55 °C to +150 °C.

Feature Summary

• TrenchFET power MOSFET architecture for optimized performance
• Dual configuration integrating two independent N-channel devices
• 100% gate resistance tested for reliability

Applications

• Battery protection circuits
• Power management systems
• Load switching applications

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm compliance requirements. The BE3 suffix indicates lead-free and halogen-free status. Confirm that the SC-70 package dimensions align with the target PCB footprint design. Ensure thermal dissipation calculations account for the specified junction-to-ambient resistance values under actual operating conditions.

Selection Notes

Select this component when a compact dual N-channel solution is required for low-voltage applications. The 20 V rating suits single-cell battery systems. Evaluate the 0.385 Ω RDS(on) limit for efficiency constraints. Verify that the 0.70 A continuous current capability meets the load requirements without exceeding thermal limits in the chosen enclosure.

Part Context

This part belongs to the Vishay Siliconix Si1902 series of dual N-channel MOSFETs. It shares the SC-70 package form factor with other low-power logic-level devices in the lineup. The product utilizes standard silicon planar technology optimized for cost-effective mass production in consumer electronics.

Replacement Considerations

Check for direct equivalents such as the SI1902DL-T1-E3 or SI1902DL-T1-GE3, which share identical electrical characteristics but differ in packaging material specifications. Cross-reference pinouts and thermal ratings before substitution.

FAQ

What is the maximum gate-source voltage rating?

The absolute maximum gate-source voltage (VGS) is rated at ±12 V.

How does the on-resistance vary with gate voltage?

RDS(on) is specified as 0.385 Ω max at VGS = 4.5 V and increases to 0.630 Ω max at VGS = 2.5 V.

Is the device suitable for high-frequency switching?

Yes, it features a typical total gate charge (Qg) of 0.8 nC and fast turn-on/turn-off times, supporting efficient high-frequency operation.