SI1902DL-T1-GE3

$0.66

Description：MOSFET 2N-CH 20V 0.66A SC70-6
Series：TrenchFET®

SKU:e8047b9ffadf Category: FET, MOSFET Arrays Brand: Vishay Siliconix

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 20V 0.66A SC70-6
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：20V
Current - Continuous Drain (Id) @ 25°C：660mA
Rds On (Max) @ Id, Vgs：385mOhm @ 660mA, 4.5V
Vgs(th) (Max) @ Id：1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：1.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：-
Power - Max：270mW
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：6-TSSOP, SC-88, SOT-363
Supplier Device Package：SC-70-6
Grade：-
Qualification：-

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SI1902DL-T1-GE3

Overview

The Vishay Siliconix SI1902DL-T1-GE3 is a dual N-channel MOSFET utilizing TrenchFET technology, rated for a drain-source voltage of 20 V. It features a maximum on-state resistance of 0.385 Ω at VGS = 4.5 V and 0.630 Ω at VGS = 2.5 V. The device supports a continuous drain current of 0.70 A and has a typical total gate charge of 0.8 nC. Packaged in a lead-free SC-70 (SOT-363) housing with six leads, it operates within a junction temperature range of -55 °C to +150 °C.

Feature Summary

TrenchFET power MOSFET architecture optimized for low gate drive requirements
Dual configuration providing two independent N-channel switches in a single package
Highly efficient switching performance characterized by minimal gate charge

Applications

Battery protection circuits
Power management systems
Signal switching applications

Procurement Notes

Verify the component against official Vishay documentation to confirm the specific ordering suffix matches project requirements. Ensure that the SC-70 package dimensions align with the designated PCB footprint. Confirm compliance with material categorization standards prior to finalizing procurement orders.

Selection Notes

Select this component when a compact dual-switch solution is required for low-voltage environments. Evaluate the thermal resistance characteristics against the expected ambient conditions. Verify that the gate threshold voltage specifications are compatible with the available control logic levels.

Part Context

This part belongs to the Si1902 series of dual N-channel MOSFETs manufactured by Vishay Siliconix. It utilizes the SC-70 surface-mount package to provide a small form factor suitable for space-constrained designs. The product line emphasizes high efficiency through advanced trench gate technology.

Replacement Considerations

Consult official manufacturer cross-reference lists for verified substitutes. Do not assume functional equivalence based solely on pinout compatibility without verifying electrical parameters.