SI1903DL-T1-E3

SI1903DL-T1-E3

$0.43
  • Description:MOSFET 2P-CH 20V 0.41A SC70-6
  • Series:TrenchFET®

SKU:a6842f7c0fb8 Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET 2P-CH 20V 0.41A SC70-6
  • Series:TrenchFET®
  • Mfr:Vishay Siliconix
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 P-Channel (Dual)
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):20V
  • Current - Continuous Drain (Id) @ 25°C:410mA
  • Rds On (Max) @ Id, Vgs:995mOhm @ 410mA, 4.5V
  • Vgs(th) (Max) @ Id:1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:1.8nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds:-
  • Power - Max:270mW
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:6-TSSOP, SC-88, SOT-363
  • Supplier Device Package:SC-70-6
  • Grade:-
  • Qualification:-

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SI1903DL-T1-E3

Overview

The SI1903DL-T1-E3 is a P-channel MOSFET manufactured by Vishay Siliconix, utilizing TrenchFET technology. It features an SO-8 surface-mount package and operates on single-supply configurations. The device supports a drain-source voltage of -20V and a gate-source voltage of ±8V. Key electrical parameters include a maximum on-resistance of 45 milliohms at a gate drive of -4.5V, with a continuous drain current capacity of 7.6A. The component functions within a temperature range of -55°C to +175°C junction temperature, offering low thermal resistance for efficient power management in compact designs.

Feature Summary

  • Utilizes advanced TrenchFET technology for optimized performance
  • Designed for low-side switching applications with high efficiency
  • Features robust thermal characteristics suitable for dense PCB layouts

Applications

  • Power distribution circuits
  • Load switch implementations
  • Battery protection modules

Procurement Notes

Verify the specific ordering suffix against official Vishay documentation to ensure correct packaging and tape-and-reel specifications. Confirm RoHS compliance status through the manufacturer's latest product change notifications. Cross-reference the full part number with authorized distributor catalogs to validate availability and lead times prior to procurement planning.

Selection Notes

Select this component when designing circuits requiring a P-channel MOSFET with low on-resistance and high current handling capabilities. Ensure the application voltage does not exceed the specified drain-source limits. Consider the SO-8 package dimensions for thermal dissipation requirements and verify compatibility with existing footprint patterns during the schematic capture phase.

Part Context

This part belongs to the SI19 series of P-channel MOSFETs from Vishay Siliconix. It is designed as a complementary counterpart to N-channel devices within the same family, facilitating push-pull or half-bridge configurations. The series emphasizes low Rds(on) and fast switching speeds for modern power management integrated circuits.

Replacement Considerations

Consult official Vishay substitution guides for direct replacements. Verify pinout compatibility and electrical parameter margins before integrating alternative components into existing designs.

SI1903DL-T1-E3SI1903DL-T1-E3
$0.43
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