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The SI1903DL-T1-GE3 is a dual N-channel MOSFET manufactured by Vishay Siliconix. It utilizes TrenchFET technology and is housed in an SC-70-6 (SOT-363) surface-mount package. The device features a drain-source voltage rating of 30V and a continuous drain current of 2.5A. Key electrical parameters include a maximum on-resistance of 48 milliohms at a gate-source voltage of 10V, a gate charge of 2.5nC, and a power dissipation capacity of 500mW. The component operates within a temperature range of -55°C to +150°C.
Verify the specific datasheet revision and RoHS compliance status directly with Vishay before integration. Confirm that the SC-70-6 footprint matches your PCB layout requirements precisely. Ensure design margins account for the specified power dissipation limits under actual operating conditions to maintain reliability.
Select this component when a dual N-channel solution is required in a minimal footprint. Compare the 48 milliohm on-resistance against load current requirements to ensure acceptable thermal performance. Verify that the 30V voltage rating provides sufficient headroom for the target application's supply rails.
This part belongs to the SI1 series of dual MOSFETs from Vishay Siliconix. It serves as a complementary component to single-channel variants like the SI1903D, offering integrated dual functionality. The product line focuses on high-density packaging solutions for modern electronic systems where board space is limited.
Consult official Vishay documentation for qualified pin-compatible alternatives. Cross-reference specifications such as on-resistance and package dimensions carefully when evaluating substitute parts from other manufacturers.