SI1905DL-T1-E3

Overview

The Vishay Siliconix SI1905DL-T1-E3 is a dual P-channel MOSFET utilizing TrenchFET technology, rated for a drain-source voltage of -8 V. It features an on-state resistance (RDS(on)) of 0.600 Ω at VGS = -4.5 V and 1.200 Ω at VGS = -1.8 V. The device supports a continuous drain current of ±0.60 A and operates within a junction temperature range of -55 °C to +150 °C. Packaged in a SOT-363 (SC-70-6) surface-mount configuration, it includes two independent channels with pinout assignments for Source/Gate/Drain pairs.

Feature Summary

• Dual P-channel architecture providing two independent switching paths in a single compact package
• TrenchFET power MOSFET technology optimized for low gate charge and fast switching performance
• Designed for operation with gate drive voltages as low as 1.8 V

Applications

• Battery-powered portable devices requiring efficient load switching
• Power management circuits in mobile phones and handheld electronics
• Low-voltage DC-to-DC converter output stages

Procurement Notes

Verify the specific ordering suffix when sourcing replacements. The -E3 suffix indicates lead-free composition compliant with RoHS directives, while -GE3 denotes both lead-free and halogen-free construction. Confirm availability status as this component may be subject to end-of-life notifications or limited distribution channels depending on the manufacturing date code.

Selection Notes

Select this component for applications requiring dual P-channel switching in minimal board space. Ensure the gate drive voltage meets the minimum threshold requirements for the desired RDS(on) level. Verify thermal dissipation capabilities against the maximum junction-to-ambient resistance ratings provided in the datasheet for the intended PCB footprint.

Part Context

This part belongs to the Vishay Siliconix Si19xxDx series of dual P-channel MOSFETs. These components are designed to replace discrete dual transistor solutions, offering reduced footprint and improved switching consistency. The Si1905DL specifically targets ultra-low voltage applications where standard logic-level MOSFETs may not switch efficiently.

Replacement Considerations

• SI1905BDH-T1-E3
• SI1907DL-T1-E3

FAQ

What is the maximum gate-source voltage rating?

The absolute maximum rating for Gate-Source Voltage (VGS) is ±8 V.

How does the on-resistance vary with gate voltage?

RDS(on) decreases as the magnitude of the gate-source voltage increases. It is specified as 0.600 Ω at -4.5 V, 0.850 Ω at -2.5 V, and 1.200 Ω at -1.8 V.

What is the typical total gate charge?

The typical total gate charge (Qg) is 2.3 nC under test conditions of VDS = -4 V, VGS = -4.5 V, and ID = -0.57 A.