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Product Detailed Parameters
- Description：MOSFET 2P-CH 20V 0.88A SC70-6
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：880mA
- Rds On (Max) @ Id, Vgs：490mOhm @ 880mA, 4.5V
- Vgs(th) (Max) @ Id：1V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs：1.8nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：570mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-TSSOP, SC-88, SOT-363
- Supplier Device Package：SC-70-6
- Grade：-
- Qualification：-
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Overview
The SI1913DH-T1-E3 is a P-channel MOSFET manufactured by Vishay Siliconix, utilizing TrenchFET technology. It features an SC-70-6 surface-mount package and operates on silicon technology. The component is part of the SI1 series and carries the E3 suffix indicating lead-free compliance. Factory packaging quantities are listed as 3000 units per reel. The device is classified under transistors within the MOSFET product category.
Feature Summary
- Utilizes TrenchFET technology for enhanced performance characteristics
- Designed for surface-mount applications in compact form factors
- Compliant with lead-free manufacturing standards
Applications
- Power management circuits requiring P-channel switching
- Battery protection systems
- Load switch applications in portable electronics
Procurement Notes
This component is officially designated as obsolete or end-of-life by the manufacturer. Availability is restricted, and distributors may not stock this item in all regions. Verification of current lifecycle status and alternative sourcing options is required before integration into new designs. Historical data indicates limited distribution channels.
Selection Notes
Engineers should evaluate the SC-70-6 package constraints and thermal dissipation capabilities relative to their specific load requirements. Since the part is obsolete, design-in alternatives from the same family or newer generations must be assessed for pin compatibility and electrical parameter alignment to ensure seamless replacement without circuit redesign.
Part Context
The SI1913DH-T1-E3 belongs to the SI1 series of power MOSFETs produced by Vishay Siliconix. This series is known for integrating TrenchFET technology to optimize on-resistance and switching efficiency. The specific model represents a P-channel variant intended for low-voltage applications, commonly found in consumer electronics and industrial control modules where space-saving surface-mount packages are preferred.
Replacement Considerations
Official documentation lists SI1913DH-E3 as an alias for this component. Designers seeking replacements should consult Vishay's obsolescence notices for recommended alternate part numbers that maintain functional equivalence.
