SI1922EDH-T1-BE3

Overview

The Vishay Siliconix Si1922EDH is a dual N-channel MOSFET utilizing TrenchFET technology, housed in an SOT-363 (SC-70) package. It features a drain-source voltage of 20 V and a continuous drain current of 1.3 A at 25 °C case temperature. The on-state resistance is specified as 0.198 Ω at VGS = 4.5 V and 0.263 Ω at VGS = 1.8 V. Total gate charge is typically 0.9 nC at VGS = 4.5 V. The device operates within a junction temperature range of -55 °C to 150 °C.

Feature Summary

• Dual N-channel configuration with independent channel control
• TrenchFET power MOSFET structure for low on-resistance
• Halogen-free construction compliant with IEC 61249-2-21
• High ESD protection capability rated at 2100 V HBM

Applications

• Load switching for portable electronic devices
• Power management circuits requiring compact packaging
• Battery-powered equipment load control

Procurement Notes

Verify the specific ordering suffix when purchasing components. The datasheet lists Si1922EDH-T1-GE3 as the lead-free and halogen-free variant. Confirm that the received part matches the required environmental compliance standards and pinout configuration before integration into the design.

Selection Notes

Select this component for applications requiring a small footprint dual N-channel switch. Ensure the gate drive voltage meets the threshold requirements for the desired on-resistance level. Consider thermal derating curves if operating at elevated ambient temperatures or without adequate heatsinking.

Part Context

This component belongs to the Vishay Siliconix discrete semiconductor lineup. It is designed for surface-mount assembly. The SOT-363 package provides a compact solution for space-constrained designs. The product utilizes standard silicon technology optimized for low power consumption.

Replacement Considerations

Si1922EDH-T1-GE3 is the lead-free version of this component.