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Product Detailed Parameters
- Description：MOSFET 2N-CH 20V 1.3A SC70-6
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：1.3A
- Rds On (Max) @ Id, Vgs：198mOhm @ 1A, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：2.5nC @ 8V
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：1.25W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-TSSOP, SC-88, SOT-363
- Supplier Device Package：SC-70-6
- Grade：-
- Qualification：-
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Overview
The Si1922EDH-T1-GE3 is a dual N-channel MOSFET from Vishay Siliconix, utilizing TrenchFET technology. It features a 20 V drain-source voltage rating and operates within a junction temperature range of -55 °C to 150 °C. The device provides an on-state resistance of 0.198 Ω at VGS = 4.5 V and 0.263 Ω at VGS = 1.8 V. Continuous drain current is rated at 1.3 A, with a maximum power dissipation of 1.25 W at TC = 25 °C. It is housed in a compact SOT-363 (SC-70) surface-mount package.
Feature Summary
- Halogen-free construction compliant with IEC 61249-2-21 standards
- Typical electrostatic discharge protection of 2100 V human body model
- 100% gate resistance tested for manufacturing reliability
Applications
- Load switching for portable electronic applications
Procurement Notes
Verify the component against official Vishay datasheet document number 67192 to confirm authenticity. Ensure the ordering suffix matches the lead-free and halogen-free specification. Cross-reference the marking code CG XX and date codes during inspection. Validate that the package corresponds to the SOT-363 form factor before integration into the design.
Selection Notes
Select this component when low voltage operation near 20 V is required in space-constrained designs. The dual configuration allows independent control of two channels within a single six-lead footprint. Evaluate thermal constraints carefully, as the small package limits continuous power dissipation to 1.25 W under ideal case cooling conditions.
Part Context
This part belongs to the Vishay Siliconix family of TrenchFET power MOSFETs designed for efficiency and density. The Si1922EDH specifically targets portable markets where minimal board area and low profile are critical. It represents a standard solution for managing multiple low-voltage loads in compact consumer electronics hardware.
Replacement Considerations
Direct substitutes must match the 20 V rating, SOT-363 package, and dual N-channel topology. Verify equivalent RDS(on) values and thermal characteristics to ensure performance parity.
