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Product Detailed Parameters
- Description：MOSFET 2N-CH 20V 1.3A SC70-6
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：1.3A
- Rds On (Max) @ Id, Vgs：205mOhm @ 1.3A, 4.5V
- Vgs(th) (Max) @ Id：1.6V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：3.8nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：105pF @ 10V
- Power - Max：1.25W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-TSSOP, SC-88, SOT-363
- Supplier Device Package：SC-70-6
- Grade：-
- Qualification：-
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Overview
The Vishay Siliconix SI1958DH-T1-E3 is a dual N-channel MOSFET utilizing TrenchFET technology, housed in an SC-70 (SOT-363) package. It features a 20 V drain-source voltage rating and a continuous drain current of 1.3 A. The device exhibits a maximum on-state resistance of 0.205 Ω at VGS = 4.5 V and 0.340 Ω at VGS = 2.5 V. Total gate charge is typically 1.2 nC at VGS = 4.5 V. Thermal performance includes a junction-to-ambient resistance of 170 °C/W and a junction-to-foot resistance of 100 °C/W. Operating temperatures range from -55 °C to +150 °C.
Feature Summary
- TrenchFET power MOSFET structure for optimized on-resistance
- Halogen-free construction compliant with IEC 61249-2-21
- RoHS Directive 2002/95/EC compliant
Applications
- Load switching for portable applications
Procurement Notes
Verify the specific ordering suffix against official documentation before procurement. The -E3 suffix indicates lead-free composition, while -GE3 denotes both lead-free and halogen-free status. Confirm that the required component matches the exact environmental compliance specifications mandated by the design requirements.
Selection Notes
Select this component for low-voltage dual-channel switching tasks requiring minimal footprint. Evaluate thermal constraints carefully due to the small surface-mount package dimensions. Ensure gate drive voltages align with the specified thresholds for optimal RDS(on) performance. Verify that peak pulsed currents remain within the absolute maximum ratings defined in the datasheet.
Part Context
This part belongs to the Vishay Siliconix Si1958DH series of dual N-channel MOSFETs. It is manufactured using silicon technology and utilizes the SOT-363 surface-mount package. The product line emphasizes compact form factors suitable for space-constrained electronic designs.
Replacement Considerations
Consult official manufacturer documentation for confirmed substitute part numbers. Do not assume functional equivalence based solely on package type or general electrical parameters without verifying pinout compatibility and absolute maximum ratings.
