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Product Detailed Parameters
- Description：MOSFET 2P-CH 12V 1.14A SC70-6
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：12V
- Current - Continuous Drain (Id) @ 25°C：1.14A (Ta), 1.3A (Tc)
- Rds On (Max) @ Id, Vgs：390mOhm @ 1A, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：4.2nC @ 8V
- Input Capacitance (Ciss) (Max) @ Vds：120pF @ 6V
- Power - Max：740mW (Ta), 1.25W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-TSSOP, SC-88, SOT-363
- Supplier Device Package：SC-70-6
- Grade：-
- Qualification：-
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Overview
The Vishay Siliconix SI1965DH is a dual P-Channel MOSFET utilizing TrenchFET technology, housed in an SC-70 (SOT-363) package. It features a -12 V drain-source voltage rating and a continuous drain current of -1.3 A at a case temperature of 25 °C. The maximum on-state resistance is 0.390 Ω at VGS = -4.5 V and -1.0 A. Total gate charge is typically 1.7 nC at VGS = -4.5 V. The device operates within a junction temperature range of -55 °C to +150 °C.
Feature Summary
- Dual P-Channel configuration with independent channel control
- TrenchFET power MOSFET architecture for optimized performance
- Low total gate charge for efficient switching applications
Applications
- Load switch for portable devices
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm material compliance attributes. The standard lead-free variant carries the -E3 suffix, while halogen-free options utilize the -GE3 suffix. Confirm that the requested part number matches the exact environmental specifications required for the assembly process.
Selection Notes
Evaluate the thermal constraints carefully, as the maximum power dissipation is limited by the small SC-70 package footprint. Ensure the operating junction temperature remains within the specified -55 °C to +150 °C range. Verify that the gate drive voltage meets the minimum requirements to achieve the desired on-state resistance levels.
Part Context
This component belongs to the Vishay Siliconix Si1 series of low-voltage MOSFETs. It is designed specifically for space-constrained portable electronics where high-density packaging is essential. The dual-channel design allows for efficient management of multiple power rails or differential signaling paths within a minimal surface area.
Replacement Considerations
Direct pin-compatible alternatives within the same family include the SI1965DH-T1-E3 and SI1965DH-T1-GE3. These variants share identical electrical characteristics but differ in their halogen content and specific environmental certifications.
