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Product Detailed Parameters
- Description：MOSFET 2P-CH 12V 1.3A SC70-6
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：12V
- Current - Continuous Drain (Id) @ 25°C：1.3A
- Rds On (Max) @ Id, Vgs：390mOhm @ 1A, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：4.2nC @ 8V
- Input Capacitance (Ciss) (Max) @ Vds：120pF @ 6V
- Power - Max：1.25W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-TSSOP, SC-88, SOT-363
- Supplier Device Package：SC-70-6
- Grade：-
- Qualification：-
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Overview
The Vishay Siliconix SI1965DH-T1-GE3 is a dual P-channel MOSFET utilizing TrenchFET technology. It features a -12 V drain-source voltage and a maximum continuous drain current of -1.3 A at 25 °C case temperature. The device offers a typical total gate charge of 1.7 nC at VGS = -4.5 V, with an on-state resistance of 0.390 Ω at VGS = -4.5 V and ID = -1.0 A. It operates within a junction temperature range of -55 °C to +150 °C and is housed in a lead-free SC-70 (SOT-363) package.
Feature Summary
- Dual P-channel configuration integrating two independent transistors in a single compact package
- TrenchFET power MOSFET architecture providing low on-state resistance and fast switching characteristics
- Lead-free and halogen-free material compliance for environmental standards
Applications
- Load switch applications for portable devices
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm material compliance status. The GE3 suffix indicates lead-free and halogen-free construction, while other suffixes may differ. Confirm that the SC-70 package dimensions match the target PCB layout requirements before finalizing procurement decisions.
Selection Notes
Select this component when a dual P-channel solution is required in a minimal footprint. Ensure the application voltage does not exceed the -12 V rating and that the thermal design accommodates the specified power dissipation limits. Verify that the gate drive voltage aligns with the specified RDS(on) test conditions for optimal performance.
Part Context
This part belongs to the Vishay Siliconix TrenchFET family of power MOSFETs. It is designed for low-voltage, high-efficiency switching applications where space constraints are critical. The dual configuration allows for independent control of two channels within a standard SMD footprint.
Replacement Considerations
Check for direct pin-compatible alternatives within the same manufacturer's portfolio that offer similar voltage and current ratings. Verify that any substitute maintains the same package type and electrical characteristics to ensure circuit compatibility.
