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Product Detailed Parameters
- Description：MOSFET 2P-CH 20V 1A SC70-6
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：1A (Ta), 1.3A (Tc)
- Rds On (Max) @ Id, Vgs：490mOhm @ 910mA, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：4nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：110pF @ 10V
- Power - Max：740mW (Ta), 1.25W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-TSSOP, SC-88, SOT-363
- Supplier Device Package：SC-70-6
- Grade：-
- Qualification：-
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Overview
The Vishay Siliconix SI1967DH-T1-BE3 is a dual P-Channel MOSFET in an SOT-363 (SC-70) package. It features a -20 V drain-source voltage and a continuous drain current of -1.3 A at 25 °C case temperature. The on-state resistance is 0.490 Ω at VGS = -4.5 V and -0.91 A, rising to 0.790 Ω at VGS = -1.8 V. Total gate charge is typically 4.0 nC at VGS = -8 V. Operating junction and storage temperatures range from -55 °C to +150 °C, with maximum power dissipation of 1.25 W at 25 °C case temperature.
Feature Summary
- TrenchFET Power MOSFET technology for optimized PWM performance
- Halogen-free construction compliant with IEC 61249-2-21 definition
- RoHS Directive 2002/95/EC compliant
Applications
- Load switching for portable devices
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official documentation before procurement. The BE3 suffix indicates lead-free status. Confirm that the component meets RoHS and halogen-free requirements as specified in the datasheet. Ensure the package type matches the design footprint. Validate all electrical parameters against the latest revision of the product specification sheet.
Selection Notes
Select this component for low-power applications requiring dual P-Channel switching in a miniaturized SC-70 package. Evaluate thermal constraints carefully, as power dissipation is limited by the small package size. Consider the on-resistance values at different gate drive voltages when designing the control circuitry. Verify that the operating temperature range aligns with the system environment.
Part Context
This device belongs to the Vishay Siliconix dual-channel MOSFET family designed for space-constrained portable electronics. It utilizes a copper leadframe within the SOT-363 package to improve thermal performance compared to older alloy versions. The part is intended for general-purpose load switching where high integration and low profile are required.
Replacement Considerations
The Si1965DH-T1-E3 is a similar dual P-Channel MOSFET but operates at a lower -12 V rating. Verify voltage headroom and on-resistance differences before substitution. No other direct pin-compatible replacements are confirmed in the provided documentation.
