SI1967DH-T1-GE3

Overview

The Vishay Siliconix SI1967DH-T1-GE3 is a dual P-channel MOSFET utilizing TrenchFET technology, housed in an SOT-363 (SC-70) surface-mount package. It features a drain-source voltage rating of -20 V and a continuous drain current of -1.3 A at 25 °C case temperature. The device exhibits a maximum on-state resistance of 0.490 Ω at VGS = -4.5 V and -0.91 A. Key dynamic parameters include a typical total gate charge of 1.6 nC at VGS = -4.5 V and a maximum junction-to-ambient thermal resistance of 170 °C/W. Operating temperatures range from -55 °C to +150 °C.

Feature Summary

• Dual P-channel configuration within a compact six-lead SOT-363 package
• TrenchFET power MOSFET architecture optimized for PWM applications
• Halogen-free construction compliant with IEC 61249-2-21 standards

Applications

• Load switching for portable electronic devices
• Power management circuits requiring low-voltage control
• Battery protection and load distribution systems

Procurement Notes

Verify the specific ordering suffix when sourcing components. The GE3 designation indicates the part is lead-free and halogen-free, adhering to RoHS Directive 2002/95/EC. Confirm that the received units match the exact package marking code 'DF' and date code format to ensure authenticity and traceability against the official Vishay datasheet specifications.

Selection Notes

Select this component for designs requiring dual independent P-channel switches in a minimal footprint. Ensure the gate drive voltage meets the minimum threshold for the required on-resistance, as RDS(on) increases significantly below -4.5 V. Account for the thermal resistance ratings when calculating power dissipation limits under steady-state or pulsed conditions to maintain junction temperatures within the specified operating range.

Part Context

This component belongs to the Si19 series of dual MOSFETs manufactured by Vishay Siliconix. It shares the SC-70 (SOT-363) form factor common across the family but is distinctively rated for -20 V operation. The device integrates two isolated P-channel transistors, allowing for differential control or high-side switching pairs in space-constrained mobile and consumer electronics applications.

Replacement Considerations

SI1967DH-T1-E3