SI1970DH-T1-GE3

Overview

The SI1970DH-T1-GE3 is a dual N-channel MOSFET manufactured by Vishay Siliconix. It utilizes TrenchFET technology and features a SC-70-6 (SOT-363) surface-mount package. The device provides a drain-source voltage of 30 V and supports a continuous drain current of 1.3 A. Key electrical parameters include a maximum on-resistance of 250 mΩ at a gate-source voltage of 4.5 V, a gate charge of 8 nC, and an input capacitance of 15 pF. The component operates within a temperature range of -55 °C to +150 °C.

Feature Summary

• Dual N-Channel Configuration
• TrenchFET Power Transistor Technology
• Lead-Free and RoHS Compliant

Applications

• Battery Protection Circuits
• Power Management Modules
• Small Signal Switching Applications

Procurement Notes

Verify the specific ordering suffix against official Vishay documentation to ensure compliance with lead-free and environmental standards. Confirm that the SC-70-6 package dimensions align with your PCB footprint requirements. Check for any recent obsolescence notifications or lifecycle status updates directly from the manufacturer before finalizing procurement plans.

Selection Notes

Select this component when a compact dual N-channel solution is required for low-voltage applications. The 30 V rating and 1.3 A current capacity suit portable electronics and battery-powered devices. Ensure the thermal performance of the SC-70-6 package meets the system's power dissipation needs under expected operating conditions.

Part Context

This part belongs to the Vishay Siliconix SI19xx series of dual MOSFETs. It is designed for space-constrained applications requiring high switching efficiency in a small outline package. The TrenchFET technology optimizes the figure of merit for low on-resistance and fast switching speeds.

Replacement Considerations

SI1970DH-T1-E3 is a confirmed equivalent variant within the same product family.