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SI2314EDS-T1-E3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET N-CH 20V 3.77A SOT23-3. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for SI2314EDS-T1-E3
- Description：MOSFET N-CH 20V 3.77A SOT23-3
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：3.77A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
- Rds On (Max) @ Id, Vgs：33mOhm @ 5A, 4.5V
- Vgs(th) (Max) @ Id：950mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：14 nC @ 4.5 V
- Vgs (Max)：±12V
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：750mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-23-3 (TO-236)
- Package / Case：TO-236-3, SC-59, SOT-23-3
Single FETs, MOSFETs datasheet and documents for SI2314EDS-T1-E3
Single FETs, MOSFETs Overview
The Si2314EDS-T1-E3 is a Vishay Siliconix N-channel enhancement mode MOSFET utilizing TrenchFET technology. It features a 20 V drain-source voltage rating and a maximum continuous drain current of 4.9 A at 25 °C. The device offers low on-resistance, specified as 0.033 Ω at VGS = 4.5 V and ID = 5.0 A. It is housed in a surface-mount TO-236 (SOT-23) package with three leads.
Single FETs, MOSFETs Feature Summary
- TrenchFET power MOSFET architecture for optimized performance
- High avalanche energy capability designed for robust operation
- ESD protection rated at 3000 V
Single FETs, MOSFETs Applications
- Lithium-ion battery protection circuits
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix to confirm compliance requirements. The -E3 designation indicates lead-free construction, while the -GE3 variant includes halogen-free certification per IEC 61249-2-21 standards. Confirm that the component matches the required thermal and electrical specifications for the target application before procurement.
Single FETs, MOSFETs Selection Notes
Select this component for applications requiring a compact SOT-23 footprint with high current handling capabilities up to 4.9 A. Ensure the gate drive voltage meets the threshold requirements for optimal on-resistance. Evaluate the thermal management strategy, as the junction-to-ambient resistance is 166 °C/W in steady-state conditions without adequate PCB copper area.
Single FETs, MOSFETs Part Context
This part belongs to the Si2314EDS series from Vishay Siliconix. It is an N-channel MOSFET designed for general-purpose switching and load control applications. The device is manufactured using silicon technology and is available in a standard surface-mount package suitable for automated assembly processes.
Single FETs, MOSFETs Replacement Considerations
Si2314EDS-T1-GE3
Single FETs, MOSFETs FAQ
What is the maximum continuous drain current at 25 °C?
The maximum continuous drain current is 4.9 A at an ambient temperature of 25 °C.
Is the device ESD protected?
Yes, the Si2314EDS-T1-E3 provides ESD protection rated at 3000 V.
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