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Product Detailed Parameters
- Description：MOSFET 20V 1.5A/1A SOT363
- Series：-
- Mfr：MCC (Micro Commercial Components)
- Package：Bulk
- Technology：MOSFET (Metal Oxide)
- Configuration：-
- FET Feature：-
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：1.5A, 1A
- Rds On (Max) @ Id, Vgs：90mOhm @ 1A, 4.5V, 150mOhm @ 1A, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：2.98nC @ 4.5V, 3nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：202pF @ 10V, 223pF @ 10V
- Power - Max：450mW
- Operating Temperature：-55°C ~ 150°C
- Mounting Type：Surface Mount
- Package / Case：6-TSSOP, SC-88, SOT-363
- Supplier Device Package：SOT-363
- Grade：-
- Qualification：-
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Overview
The SI2429DW-TP is a dual N-channel and P-channel MOSFET in a SOT-363 package. It utilizes Trench LV technology for low RDS(on). The N-channel offers a 20V VDS, 1.5A ID, and 90mΩ RDS(on) at VGS=4.5V. The P-channel provides -20V VDS, -1A ID, and 150mΩ RDS(on) at VGS=-4.5V. Operating junction temperature ranges from -55°C to +150°C with a thermal resistance of 290°C/W.
Feature Summary
- Integrates complementary N-channel and P-channel transistors in a compact SOT-363 surface-mount package.
- Employs trench low-voltage technology to achieve minimized on-resistance for improved power efficiency.
- Complies with RoHS standards and features halogen-free construction with UL 94 V-0 flammability rating.
Applications
- Battery protection circuits
- Power management modules
- Low voltage load switches
Procurement Notes
Verify the specific ordering suffix against manufacturer documentation to confirm packaging configuration. Ensure compliance with moisture sensitivity level requirements during storage and handling. Confirm that the component meets environmental directives relevant to the target deployment region before finalizing procurement specifications.
Selection Notes
Select this component for designs requiring complementary switching in minimal space. Evaluate thermal constraints carefully due to the high junction-to-ambient resistance value. Verify gate drive voltage levels align with the specified threshold characteristics for both channel types to ensure reliable switching performance.
Part Context
This device belongs to the Micro Commercial Components dual MOSFET family designed for portable electronics. It serves as an integrated solution for applications needing paired N-type and P-type switching capabilities within a single footprint, reducing board space compared to discrete implementations.
Replacement Considerations
Consult official substitution lists for verified equivalents. Cross-reference pinout compatibility and electrical ratings when considering alternative manufacturers or packages.
FAQ
What is the maximum operating junction temperature?
The maximum operating junction temperature is +150°C.
Does the device support pulsed drain current?
Yes, the datasheet specifies repetitive pulsed drain current ratings limited by the maximum junction temperature.
What is the moisture sensitivity level?
The device is rated at Moisture Sensitivity Level 1.
