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The SI3134KDW-TP is a dual N-channel enhancement mode MOSFET manufactured by Micro Commercial Components (MCC). It integrates two independent N-channel transistors within a single SOT-363-6 surface-mount package. The device features a drain-source breakdown voltage of 20 V and supports continuous drain currents of 750 mA for the primary channel and 660 mA for the secondary channel. Key electrical characteristics include a maximum on-resistance of 380 mOhms at 4.5 V gate drive and a threshold voltage of 1.1 V. The component operates reliably across a temperature range from -55°C to +150°C with a power dissipation rating of 150 mW.
Verify the specific suffix against official Micro Commercial Components documentation to confirm pinout compatibility and electrical tolerances. Ensure that the sourcing channel provides authentic components with traceable manufacturing data. Cross-reference the part number with current distributor catalogs to confirm availability status, as supply chain conditions may affect lead times and stock levels for this specific dual-transistor variant.
Select this component when a dual N-channel solution is required in a minimal footprint. The 20 V rating suits low-voltage systems. Compare the combined on-resistance and capacitance values against single discrete alternatives to evaluate board space savings versus potential thermal constraints in high-density designs.
This part belongs to the SI3134K series of dual MOSFETs from Micro Commercial Components. It serves as a compact alternative to using two separate single-channel transistors, reducing assembly complexity. The SOT-363-6 package allows for automated surface-mount placement, supporting high-volume manufacturing processes for consumer electronics and industrial control boards.
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