SI3439KDWA-TP

Overview

The SI3439KDWA-TP is a dual N+P-channel MOSFET in a SOT-363 package. It utilizes trench LV technology for low on-resistance. The N-channel offers a 20V drain-source voltage and 0.75A continuous current with 300mΩ resistance. The P-channel provides -20V and -0.6A with 850mΩ resistance. Both channels feature ±12V gate-source ratings, 325mW power dissipation, and operate from -55°C to +150°C.

Feature Summary

• Trench LV MOSFET technology for enhanced performance
• ESD protection rated up to 2KV (HBM)
• Moisture Sensitivity Level 1 classification
• Halogen-free green device with UL 94 V-0 flammability rating

Applications

• Battery protection circuits
• Power management applications
• Load switching systems

Procurement Notes

Verify the component authenticity by checking the manufacturer's marking code against official documentation. Ensure the ordering suffix matches the required tape and reel quantity of 3000 pieces per reel. Confirm RoHS compliance status through the specific datasheet revision before finalizing procurement orders.

Selection Notes

Select this component for designs requiring complementary N and P-channel switching in a compact footprint. Consider the thermal resistance of 385°C/W when calculating heat dissipation requirements. Verify that the gate threshold voltage aligns with the logic levels of the driving circuitry for reliable switching operation.

Part Context

This part belongs to the Micro Commercial Components dual MOSFET family. It integrates two independent transistors into a single surface-mount package. The design supports space-constrained PCB layouts while providing necessary isolation between the N and P channels for efficient circuit control.

Replacement Considerations

Consult official substitution lists for verified equivalents. Cross-reference pin configurations and electrical parameters carefully. Ensure any replacement maintains the same package type and voltage ratings to guarantee compatibility.